Sanyo 2SD1213 Specifications

Ordering number:1022A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB904/2SD1213
30V/12A High-Speed Switching Applications
Applications
· Large current switching of relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage :
V
=–0.5V (PNP), 0.4V (NPN) max.
CE(sat)
· Large current capacity.
( ) : 2SB904
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2022A
[2SB904/2SD1213]
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PB
06)–(V
03)–(V
6)–(V
02)–(A
03)–(A
5.2W 06W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
hEF2VECI,V2)–(=
egatloVnoitarutaSrettimE-ot-rotcelloCV
* : The 2SB904/2SD1213 are classified as follows according to hFE at 1A.
041Q07002R001082S041
V
OBC
V
OBE
1VECI,V2)–(=
EF
I
)tas(EC
BC
BE
C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
I,V04)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A01)–(=
C
I,A8)–(=
A4.0)–(=
B
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4067KI/D152KI, TS No.1022–1/4
sgnitaR
*07*082
03
)52.0–()5.0–(V
2.04.0V
tinU
2SB904/2SD1213
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V
T
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E no gts
f
I,V5)–(=
EC
A1)–(=
C
I,Am1)–(=
0=06)–(V
E
R,Am1)–(=
= 03)–(V
EB
I,Am1)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS003sn tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS02sn
Switching Time T est Circuit
sgnitaR
nimpytxam
021zHM
)003(sn
006sn
tinU
No.1022–2/4
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