Sanyo 2SD1153 Specifications

Ordering number:828D

PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors

2SB865/2SD1153

Drivers Applications

Applications

· Relay drivers, hammer drivers, lamp drivers, motor drivers.

Features

·High DC current gain (4000 or more).

·Large current capacity and wide ASO.

·Low saturation voltage.

( ) : 2SB865

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2006A

[2SB865/2SD1153]

EIAJ : SC-51	B : Base
SANYO : MP	C : Collector
	E : Emitter

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(–)80	V
Collector-to-Emitter Voltage	VCEO		(–)50	V
Emitter-to-Base Voltage	VEBO		(–)10	V
Collector Current	IC		(–)1.5	A
Collector Current (Pulse)	ICP		(–)3	A
Collector Dissipation	PC		900	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=(–)40V, IE=0			(–)0.1	µA
Emitter Cutoff Current	IEBO	VEB=(–)8V, IC=0			(–)0.1	µA
DC Current Gain	hFE1	VCE=(–)2V, IC=(–)500mA	4000
	hFE2	VCE=(–)2V, IC=(–)10mA	3000
Gain-Bandwidth Product	fT	VCE=(–)10V, IC=(–)50mA		120		MHz
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=(–)500mA, IB=(–)0.5mA		(–)0.9	(–)1.5	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=(–)500mA, IB=(–)0.5mA		(–)1.5	(–)2.0	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=(–)10µA, IE=0	(–)80			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=(–)1mA, RBE=∞	(–)50			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=(–)10µA, IC=0	(–)10			V

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91098HA (KT)/4027KI/3045MW/D152KI, TS No.828–1/3

2SB865/2SD1153

Electrical Connection

No.828–2/3