
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Current Driver Applications
Ordering number:EN784E
2SD1145
Applications
· Relay drivers, hammer drivers, lamp drivers, strobe
DC-DC converters, motor drivers.
Features
· Low saturation voltage.
· Large current capacity and wide ASO.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2006B
[2SD1145]
6.0
5.0
0.5
0.6
6.0
0.5
23
1
1.45
1.45
eslupelgnis,sm001 8A
4.7
8.5
3.0
14.0
0.5
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
SANYO :MP
06V
02V
6V
5A
9.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
* : The 2SD1145 is classified by 0.5A hFE as follows :
hEF1VECI,V2=
hEF2VECI,V2=
V
OBC
V
OBE
V
T
V
bo
I
)tas(EC
C
I
C
)tas(EB
I,V05=
BC
BE
EC
BC
0=0.1Aµ
E
I,V5=
0=0.1Aµ
C
A5.0=
C
C
I,V01=
C
zHM1=f,V01=
I,A3=
B
I,A3=
B
002E001023F061065G082
)esluP(A3=
Am05=
)esluP(Am06=
)esluP(Am06=
21599TH (KT)/2090MO/5257KI/3095KI, 6212KI, ki No.784–1/3
nimpytxam
57
sgnitaR
*001*065
021zHM
54Fp
tinU
5.0V
5.1V