Ordering number:723H
PNP/NPN Epitaxial Planar Silicon Transistors
2SB826/2SD1062
50V/12A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
· Low-saturation collector-to-emitter voltage :
V
=–0.5V (PNP), 0.4V (NPN) max.
CE(sat)
· Wide ASO leading to high resistance to breakdown.
( ) : 2SB826
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
* : The 2SB826/2SD1062 are classified by 1A hFE as follows :
041Q07002R001082S041
OBC
OEC
OBE
C
PC
C
OBC
OBE
1VECI,V2)–(=
EF
hEF2VECI,V2)–(=
T
Tc=25˚C
V
BC
V
BE
V
EC
Package Dimensions
unit:mm
2010C
[2SB826/2SD1062]
1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ : SC46
sgnitaR
nimpytxam
I,V04)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A5)–(=
C
I,V5)–(=
A1)–(=01zHM
C
*07*082
03
06)–(V
05)–(V
6)–(V
21)–(A
51)–(A
04W
˚C
˚C
tinU
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO)/8-3832/D251MH/4027KI/3135KI No.723–1/4
2SB826/2SD1062
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTllaFt
emiTegarotSt
I
)tas(EC
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
f
gts
I,A6)–(=
C
C
C
E
A3.0)–(=
B
I,Am1)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Am1)–(=
0=6)–(V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time T est Circuit
sgnitaR
nimpytxam
)2.0(sµ
1.0sµ
)4.0(sµ
2.1sµ
)1.0(sµ
50.0sµ
tinU
4.0V
)5.0–(V
No.723–2/4