Sanyo 2SD1060 Specifications
Ordering number:686I
PNP/NPN Epitaxial Planar Silicon Transistors
2SB824/2SD1060
50V/5A Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters,
converters, and other general large-current switch-
ing.
Features
· Low collector-to-emitter saturation voltage :
V
=(–)0.4V max/IC=(–)3A, IB=(–)0.3A.
CE(sat)
( ) : 2SB824
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2010C
[2SB824/2SD1060]
JEDEC : TO-220AB 1 : Base
EIAJ : SC-46 2 : Collector
3 : Emitter
OBC
OEC
OBE
Tc=25˚C
06)–(V
05)–(V
6)–(V
5)–(A
9)–(A
03W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SB824/2SD1060 are graded as follows by hFE at 1A :
041Q07002R001082S041
OBC
OBE
1VECI,V2)–(=
EF
hEF2VECI,V2)–(=
T
bo
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
V
BC
V
BE
V
EC
V
BC
I,V04)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A3)–(=
C
I,V5)–(=
A1)–(=03zHM
C
zHM1=f,V01)–(=
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/D251MH/4017KI No.686–1/4
sgnitaR
*07*082
03
001Fp
)061(Fp
tinU
2SB824/2SD1060
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
gts
f
I,A3)–(=
C
C
C
E
A3.0)–(=4.0)–(V
B
I,Am1)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Am1)–(=
0=6)–(V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time T est Circuit
sgnitaR
nimpytxam
1.0sµ
)7.0(sµ
4.1sµ
2.0sµ
tinU
No.686–2/4
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