Sanyo 2SD1047P Specifications

Ordering number : ENN6572

2SB817P / 2SD1047P

2SB817P : PNP Epitaxial Planar Silicon Transistor

2SD1047P : NPN Triple Diffused Planar Silicon Transistor

2SB817P / 2SD1047P

140V / 12A, AF80W Output Applications

Features

•

Capable of being mounted easily because of one­point fixing type plastic molded package (Inter­changeable with TO-3).

• Wide ASO because of built-in ballast resistance.

• Goode dependence of f

on current and good HF

T

characteristic.

Specifications

( ) : 2SB817P

Package Dimensions

unit : mm

2022A

[2SB817P / 2SD1047P]

2.6

1.6

1.0

5.45

1

0.6

15.6

14.0

3.2

3.5

1.2

15.0

1.3

2.0

20.0 20.0

3

2

1.4

5.45

4.8

2.0

0.6

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PB

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg −40 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C 120 W

(−)160 V
(−)140 V

(−)6 V
(−)12 A
(−)15 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=(--)80V, IE=0 (--)0.1 mA
VEB=(--)4V, IC=0 (--)0.1 mA

Continued on next page.

82200 TS IM TA-3036

Unit

No.6572-1/4

2SB817P / 2SD1047P

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Gain-Bandwidth Product f

Output Capacitance Cob VCB=(--)10V, f=1MHz (300)210 pF
Base-to-Emitter Saturation Voltage V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)0.5A (1.1)0.6 2.5 V
Collector-to-Base Breakdown Voltage V

Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V

Turn-ON Time t
Fall Time t
Storage Time t

* : The 2SB817P / 2SD1047P are classified by 1A hFE as follows

Rank D E

h

FE

60 to 120 100 to 200

hFE1VCE=(--)5V, IC=(--)1A 60* 200*
hFE2VCE=(--)5V, IC=(--)6A 20

VCE=(--)5V, IC=(--)1A 15 MHz

T

BE

(BR)CBOIC
(BR)CEO
(BR)EBOIE

on

stg

VCE=(--)5V, IC=(--)1A 1.5 V

=(--)5mA, IE=0 (--)160 V
IC=(--)5mA, RBE=∞ (--)140 V
IC=(--)50mA, RBE=∞ (--)140 V

=(--)5mA, IC=0 (--)6 V
See specified test circuit.
See specified test circuit.

f

See specified test circuit.

Ratings

min typ max

(0.25)0.26
(0.53)0.68
(1.61)6.88

Unit

µs
µs
µs

Swicthing Time Test Circuit

PW=20µs

INPUT

--10

--9

--8

--7

-- A
C

--6

--5

--4

--3

Collector Current, I

--2

--1
0

0 --10--5 --15 --25 --35--20 --30 --40

51Ω

--240mA

I

B1

1Ω

I

B2

200V

1µF1µF

VBE= --2V

IC -- V

--200mA

--160mA

--120mA

R

10IB1= --10IB2=IC=1A

For PNP, the polarity is reversed.

CE

--80mA

Collector-to-Emitter Voltage, VCE -- V

IC -- V

--7

2SB817P
VCE= --5V

--6

BE

OUTPUT

20Ω

VCC=20V

--40mA

--20mA

IB=0

2SB817P

IT02167

IC -- V

10

9

240mA

8

7

-- A
C

6
5

4

3

Collector Current, I

2

1
0

0 5 10 15 25 3520 30 40

200mA

160mA

120mA

CE

80mA

40mA

Collector-to-Emitter Voltage, VCE -- V

IC -- V

7

6

BE

2SD1047P

20mA

IB=0

IT02168

2SD1047P
VCE=5V

--5

-- A
C

--4

--3

--2

Collector Current, I

--1

0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6

Base-to-Emitter V oltage, VBE -- V

IT02169

5

-- A
C

4

3

2

Collector Current, I

1

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Base-to-Emitter V oltage, VBE -- V

IT02170

No.6572-2/4

-- MHz
T

10

2SB817P / 2SD1047P

fT -- I

5

3

2

7
5

C

2SB817P
VCE= --5V

-- MHz
T

10

5

3

2

7
5

fT -- I

C

2SD1047P
VCE=5V

3

2

Gain-Bandwidth Product, f

1.0
23 57

Collector Current, I

1000

7
5

3

FE

2

100

7
5

DC Current Gain, h

3
2

10

--0.1

23 57

Collector Current, IC -- A

2

1000

7
5

--1.0--0.1

hFE -- I

--1.0

Cob -- V

23 57

-- A

C

C

2SB817P
VCE= --5V

23 57

CB

2SB817P
f=1MHz

--10

IT02171

IT02173

--10

3

2

Gain-Bandwidth Product, f

1.0

1000

7
5

3

FE

2

100

7
5

DC Current Gain, h

3

2

2

10

2

1000

7
5

0.1

23 57

23 57

Collector Current, I

hFE -- I

1.0

Collector Current, IC -- A

Cob -- V

1.00.1

23 57

C

C

23 57

CB

-- A

IT02172

2SD1047P
VCE=5V

10

IT02174

2SD1047P
f=1MHz

10

2

3
2

100

7
5

Output Capacitance, Cob -- pF

3
2

3
2

--10
7
5

(sat) -- V

3

CE

2

--1.0
7
5

3
2

Collector-to-Emitter

Saturation V oltage, V

--0.1
7

5

23 57

--10--1.0

Collector-to-Base Voltage, V

VCE(sat) -- I

23 57

Collector Current, IC -- A

--1.0--0.1

23 57

IT02175

-- V

CB

C

2SB817P
IC / IB=10

23 57

IT02177

--100

--10

3
2

100

7
5

Output Capacitance, Cob -- pF

3
2

3
2

10

7
5

(sat) -- V

3

CE

2

1.0
7
5

3
2

Collector-to-Emitter

Saturation V oltage, V

0.1
7

5

23 57

101.0

Collector-to-Base Voltage, V

VCE(sat) -- I

23 57

Collector Current, IC -- A

1.00.1

23 57

IT02176

-- V

CB

C

2SD1047P
IC / IB=10

23 57

IT02178

No.6572-3/4

100

10

(sat) -- V

BE

2SB817P / 2SD1047P

5

3
2

VBE(sat) -- I

C

2SB817P
IC / IB=10

(sat) -- V

BE

5

3
2

VBE(sat) -- I

C

2SD1047P
IC / IB=10

--10
7

5

3
2

--1.0
7

5

Base-to-Emitter Saturation Voltage, V

2

10

7
5

-- A
C

3
2

1.0
7
5

Collector Current, I

3
2

0.1

23 57

I

C

I

CP

2SB817P / 2SD1047P
(For PNP minus sign is omitted)

10 100

Collector-to-Emitter Voltage, VCE -- V

--1.0--0.1

23 57

Collector Current, IC -- A

A S O

DC operation

100ms

253757 2

10ms

1ms

IT02179

IT02181

--10

10

7
5

3
2

1.0
7

5

Base-to-Emitter Saturation Voltage, V

23 57

1.00.1

23 57

Collector Current, IC -- A

140

PC -- Tc

2SB817P / 2SD1047P

120

-- W

100

C

80

60

40

Collector Dissipation, P

20

0

0 20 40 60 80 100 120 140 160

Case Tamperature, Tc -- °C

10

IT02180

IT02182

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of August, 2000. Specifications and information herein are subject
to change without notice.

No.6572-4/4

PS