Sanyo 2SD1047P Specifications
Ordering number : ENN6572
2SB817P / 2SD1047P
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
•
Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).
• Wide ASO because of built-in ballast resistance.
• Goode dependence of f
on current and good HF
T
characteristic.
Specifications
( ) : 2SB817P
Package Dimensions
unit : mm
2022A
[2SB817P / 2SD1047P]
2.6
1.6
1.0
5.45
1
0.6
15.6
14.0
3.2
3.5
1.2
15.0
1.3
2.0
20.0 20.0
3
2
1.4
5.45
4.8
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg −40 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C 120 W
(−)160 V
(−)140 V
(−)6 V
(−)12 A
(−)15 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=(--)80V, IE=0 (--)0.1 mA
VEB=(--)4V, IC=0 (--)0.1 mA
Continued on next page.
82200 TS IM TA-3036
Unit
No.6572-1/4
2SB817P / 2SD1047P
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (300)210 pF
Base-to-Emitter Saturation Voltage V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)0.5A (1.1)0.6 2.5 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Fall Time t
Storage Time t
* : The 2SB817P / 2SD1047P are classified by 1A hFE as follows
Rank D E
h
FE
60 to 120 100 to 200
hFE1VCE=(--)5V, IC=(--)1A 60* 200*
hFE2VCE=(--)5V, IC=(--)6A 20
VCE=(--)5V, IC=(--)1A 15 MHz
T
BE
(BR)CBOIC
(BR)CEO
(BR)EBOIE
on
stg
VCE=(--)5V, IC=(--)1A 1.5 V
=(--)5mA, IE=0 (--)160 V
IC=(--)5mA, RBE=∞ (--)140 V
IC=(--)50mA, RBE=∞ (--)140 V
=(--)5mA, IC=0 (--)6 V
See specified test circuit.
See specified test circuit.
f
See specified test circuit.
Ratings
min typ max
(0.25)0.26
(0.53)0.68
(1.61)6.88
Unit
µs
µs
µs
Swicthing Time Test Circuit
PW=20µs
INPUT
--10
--9
--8
--7
-- A
C
--6
--5
--4
--3
Collector Current, I
--2
--1
0
0 --10--5 --15 --25 --35--20 --30 --40
51Ω
--240mA
I
B1
1Ω
I
B2
200V
1µF1µF
VBE= --2V
IC -- V
--200mA
--160mA
--120mA
R
10IB1= --10IB2=IC=1A
For PNP, the polarity is reversed.
CE
--80mA
Collector-to-Emitter Voltage, VCE -- V
IC -- V
--7
2SB817P
VCE= --5V
--6
BE
OUTPUT
20Ω
VCC=20V
--40mA
--20mA
IB=0
2SB817P
IT02167
IC -- V
10
9
240mA
8
7
-- A
C
6
5
4
3
Collector Current, I
2
1
0
0 5 10 15 25 3520 30 40
200mA
160mA
120mA
CE
80mA
40mA
Collector-to-Emitter Voltage, VCE -- V
IC -- V
7
6
BE
2SD1047P
20mA
IB=0
IT02168
2SD1047P
VCE=5V
--5
-- A
C
--4
--3
--2
Collector Current, I
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
Base-to-Emitter V oltage, VBE -- V
IT02169
5
-- A
C
4
3
2
Collector Current, I
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-to-Emitter V oltage, VBE -- V
IT02170
No.6572-2/4
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