Sanyo 2SD1046 Specifications

Ordering number:677D

PNP/NPN Epitaxial Planar Silicon Transistors

2SB816/2SD1046

For LF Power Amplifier, 50W Output

Large Power Switching Applications

Features

·Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).

·Wide ASO because of built-in ballast resistance.

·Goode dependence ofTf on current and good HF characteristic.

( ) : 2SB816

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2022A

[2SB816/2SD1046]

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PB

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(–)150	V
Collector-to-Emitter Voltage	VCEO		(–)120	V
Emitter-to-Base Voltage	VEBO		(–)6	V
Collector Current	IC		(–)8	A
Collector Current (Pulse)	ICP		(–)12	A
Collector Dissipation	PC	Tc=25˚C	80	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–40 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=(–)80V, IE=0			(–)0.1	mA
Emitter Cutoff Current	IEBO	VEB=(–)4V, IC=0			(–)0.1	mA
DC Current Gain	hFE1	VCE=(–)5V, IC=(–)1A	60*		200*
	hFE2	VCE=(–)5V, IC=(–)5A	20
Gain-Bandwidth Product	fT	VCE=(–)5V, IC=(–)1A		15		MHz
Output Capacitance	Cob	VCB=(–)10V, f=1MHz		(220)		pF
				160		pF

* : The 2SB816/2SD1046 are classified by 1A hFE as follows :

60 D 120 100 E 200

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91098HA (KT)/4017KI/6284KI, MT No.677–1/4

2SB816/2SD1046

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Base-to-Emitter Voltage	VBE	VCE=(–)5V, IC=(–)1A			1.5	V
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=(–)5A, IB=(–)0.5A		1.0	2.0	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=(–)5mA, IE=0	(–)150			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=(–)5mA, RBE=∞	(–)120			V
		IC=(–)50mA, RBE=∞	(–)120			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=(–)5mA, IC=0	(–)6			V
Turn-ON Time	ton	See specified test circuit.		(0.22)		µs
				0.22		µs
Fall Time	tf	See specified test circuit.		(0.37)		µs
				1.02		µs
Storage Time	tstg	See specified test circuit.		(0.93)		µs
				6.66		µs

Swicthing Time Test Circuit

No.677–2/4