Sanyo 2SD1012 Specifications
Ordering number:676D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB808/2SD1012
Low-Voltage Large-Current
Amplifier Applications
Package Dimensions
unit:mm
2033
[2SB808/2SD1012]
( ) : 2SB808
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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Electrical Characteristics at Ta = 25˚C
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C
PC
C
EF
hEF2VECI,V2)–(=
T
OBC
OEC
OBE
V
OBC
V
OBE
1VECI,V2)–(=
V
V
bo
B : Base
C : Collector
E : Emitter
SANYO : SPA
02)–(V
51)–(V
5)–(V
7.0)–(A
5.1)–(A
052Wm
˚C
˚C
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I,V51)–(=
BC
BE
EC
BC
0=0.1)–(Aµ
E
I,V4)–(=
0=0.1)–(Aµ
C
C
C
Am05)–(=
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I,V01)–(=
C
Am05)–(=
zHM1=f,V01)–(=
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/1115MY/1283KI, TS No.676–1/5
2SB808/2SD1012
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2I
)tas(EC
)tas(EB
OBC)RB(
OEC)RB(
OBE)RB(
I
I
I
I
* : The 2SB808/2SD1012 are classified by 50mA hFE as follows :
2SB808
2SD1012
023F061065G082
023F061065G082069H084
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C
C
C
C
C
E
I,Am5)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am5.0)–(=
I,Am001)–(=
B
I,Am001)–(=
B
EB
Am01)–(=
Am01)–(=8.0)–(2.1)–(V
0=02)–(V
=∞ 51)–(V
0=5)–(V
)51–()53–(Vm
0152Vm
)06–()021–(Vm
0308Vm
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No.676–2/5
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