Ordering number:676D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB808/2SD1012
Low-Voltage Large-Current
Amplifier Applications
Package Dimensions
unit:mm
2033
[2SB808/2SD1012]
( ) : 2SB808
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVrettimE-ot-rotcelloCV
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)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
Electrical Characteristics at Ta = 25˚C
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tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOesaBnommoCC
C
PC
C
EF
hEF2VECI,V2)–(=
T
OBC
OEC
OBE
V
OBC
V
OBE
1VECI,V2)–(=
V
V
bo
B : Base
C : Collector
E : Emitter
SANYO : SPA
02)–(V
51)–(V
5)–(V
7.0)–(A
5.1)–(A
052Wm
˚C
˚C
sgnitaR
nimpytxam
I,V51)–(=
BC
BE
EC
BC
0=0.1)–(Aµ
E
I,V4)–(=
0=0.1)–(Aµ
C
C
C
Am05)–(=
esluPAm005)–(=
I,V01)–(=
C
Am05)–(=
zHM1=f,V01)–(=
*061*069
08
052zHM
)31(Fp
8Fp
tinU
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/1115MY/1283KI, TS No.676–1/5
2SB808/2SD1012
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egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
1I
)tas(EC
2I
)tas(EC
)tas(EB
OBC)RB(
OEC)RB(
OBE)RB(
I
I
I
I
* : The 2SB808/2SD1012 are classified by 50mA hFE as follows :
2SB808
2SD1012
023F061065G082
023F061065G082069H084
sgnitaR
nimpytxam
C
C
C
C
C
E
I,Am5)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am5.0)–(=
I,Am001)–(=
B
I,Am001)–(=
B
EB
Am01)–(=
Am01)–(=8.0)–(2.1)–(V
0=02)–(V
=∞ 51)–(V
0=5)–(V
)51–()53–(Vm
0152Vm
)06–()021–(Vm
0308Vm
tinU
No.676–2/5
2SB808/2SD1012
Sample Application Circuit : Low-voltage 3V (PO 120mW) ITL-OTL power amplifier.
· Circuit configuration
For obtaining an output of more than 100mW, the mid dle-point voltage at the output stage and the collector voltage
of the driver transistor must be VCC/2. Therefore, the output stage is of quasi complementary configuration composed of npn/npn transistors. The phase is reversed by the 2SA608 and the middle-point voltage are the output
stage and the collector voltage of the driver transistor are more to be VCC/2 so that the output can be maximized.
Main Specifications
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ecnatsisertupnIP
Note : for above-mentioned hFE rank.
R1 : Used control idle current
For R1=820Ω, use rank F for [TR4, 5 (2SD1012)].
For R1=680Ω, use rank G for [TR4, 5 (2SD1012)].
Wm01=5.54ot3.347.54ot5.34Bd
O
Wm05=6.2ot4.15.2ot3.1%
O
Wm01=5.02ot4.010.12ot0.11kΩ
O
Unit (resistance : Ω, capacitance : F)
No.676–3/5
2SB808/2SD1012
No.676–4/5
2SB808/2SD1012
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any and all SANYO products described or contained herein fall under strategic
products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of
Japan, such products must not be exported without obtaining export license from the Ministry of
International Trade and Industry in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 1998. Specifications and information herein are
subject to change without notice.
PS No.676–5/5
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