Sanyo 2SD1012 Specifications
Ordering number:676D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB808/2SD1012
Low-Voltage Large-Current
Amplifier Applications
Package Dimensions
unit:mm
2033
( ) : 2SB808
Specifications
Absolute Maximum Ratings at Ta = 25˚C
[2SB808/2SD1012]
B : Base
C : Collector
E : Emitter
SANYO : SPA
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)20 |
V |
Collector-to-Emitter Voltage |
VCEO |
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(–)15 |
V |
Emitter-to-Base Voltage |
VEBO |
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(–)5 |
V |
Collector Current |
IC |
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(–)0.7 |
A |
Collector Current (Pulse) |
ICP |
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(–)1.5 |
A |
Collector Dissipation |
PC |
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250 |
mW |
Junction Temperature |
Tj |
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125 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +125 |
˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
ICBO |
VCB=(–)15V, IE=0 |
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(–)1.0 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
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(–)1.0 |
µA |
DC Current Gain |
hFE1 |
VCE=(–)2V, IC=(–)50mA |
160* |
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960* |
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hFE2 |
VCE=(–)2V, IC=(–)500mA Pulse |
80 |
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Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)50mA |
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250 |
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MHz |
Common Base Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
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(13) |
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pF |
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8 |
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pF |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/1115MY/1283KI, TS No.676–1/5
2SB808/2SD1012
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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||||
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min |
typ |
max |
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Collector-to-Emitter Saturation Voltage |
VCE(sat)1 |
IC=(–)5mA, IB=(–)0.5mA |
|
(–15) |
(–35) |
mV |
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10 |
25 |
mV |
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Collector-to-Emitter Saturation Voltage |
VCE(sat)2 |
IC=(–)100mA, IB=(–)10mA |
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(–60) |
(–120) |
mV |
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30 |
80 |
mV |
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Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)100mA, IB=(–)10mA |
|
(–)0.8 |
(–)1.2 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)20 |
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V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)15 |
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V |
Emitter-to-Base Breakdown Votage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)5 |
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V |
* : The 2SB808/2SD1012 are classified by 50mA hFE as follows :
2SB808 |
160 |
F |
320 |
280 |
G |
560 |
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2SD1012 |
160 |
F |
320 |
280 |
G |
560 |
480 H 960 |
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No.676–2/5
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