Ordering number : ENA0279
2SC6082
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC6082
50V / 15A High-Speed Switching Applications
Applications
•
High-speed switching applications (switching regulator, driver circuit).
Features
•
Adoption of MBIT process.
•
Large current capacitance.
•
Low collector-to-emitter saturation voltage.
•
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CES
CEO
EBO
C
CP
B
C
PW≤10µs, duty cycle≤10% 20 A
Tc=25°C25W
60 V
60 V
50 V
6V
15 A
3A
2W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
CBO
EBO
hFE1VCE=2V, IC=330mA 200 560
hFE2VCE=2V, IC=10A 50
Ratings
min typ max
VCB=40V , IE=0A 10 µA
VEB=4V, IC=0A 10 µA
Continued on next page.
72606 / 31506FA MS IM TB-00002089
Unit
No. A0279-1/4
2SC6082
Continued from preceding page.
Parameter Symbol Conditions
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V, f=1MHz 85 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=7.5A, IB=375mA 200 400 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=7.5A, IB=375mA 1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
(BR)CBOIC
(BR)CESIC
(BR)CEOIC
(BR)EBOIE
on
stg
VCE=10V, IC=2A 195 MHz
T
=100µA, IE=0A 60 V
=100µA, RBE=0Ω 60 V
=1mA, RBE=∞ 50 V
=100µA, IC=0A 6 V
See specified Test Circuit. 52 ns
See specified Test Circuit. 560 ns
See specified Test Circuit. 37 ns
f
min typ max
Package Dimensions Switching Time Test Circuit
unit : mm
7508-002
PW=20µs
D.C.≤1%
INPUT
V
R
50Ω
VBE= --5V
IC=20IB1= --20IB2=5A
18.1
5.6
10.0
1.6
1.2
0.75
3.2
3.5
7.2
16.0
14.0
4.5
2.8
0.7
Ratings
I
B1
I
B2
R
B
+
100µF 470µF
+
VCC=25V
OUTPUT
R
L
Unit
123
2.55 2.55
15
From a top
14
300mA
13
250mA
200mA
12
180mA
11
150mA
-- A
120mA
10
C
100mA
9
8
7
6
5
4
Collector Current, I
3
2
1
0
0.40 0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8
Collector-to-Emitter Voltage, VCE -- V
90mA
2.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
IC -- V
CE
60mA
70mA
80mA
50mA
40mA
30mA
20mA
10mA
IB=0mA
IT10574
10
9
8
7
-- A
C
6
5
4
3
Collector Current, I
2
1
0
80mA
70mA
60mA
100mA
0.20 0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
Collector-to-Emitter Voltage, VCE -- V
90mA
IC -- V
CE
50mA
40mA
30mA
20mA
15mA
10mA
5mA
IB=0mA
IT10575
No. A0279-2/4
2SC6082
16
VCE=2V
14
12
-- A
C
10
8
6
4
Collector Current, I
2
0
0 0.2 0.4 0.6 0.8 1.21.0
IC -- V
Base-to-Emitter Voltage, VBE -- V
1000
7
5
3
FE
2
100
7
5
DC Current Gain, h
3
2
10
0.01
325
hFE -- I
7235
0.1
Collector Current, IC -- A
1000
7
5
3
-- pF
2
100
7
5
3
Output Capacitance, Cob
2
10
0.1
325
Cob -- V
7235
1.0
Collector-to-Base Voltage, V
VCE(sat) -- I
(sat) -- V
7
IC / IB=50
5
3
2
CE
0.1
7
5
3
2
Collector-to-Emitter
Saturation Voltage, V
Ta=75°C
BE
°C
°C
°C
Ta=75
25
--25
C
Ta=25°C
V
CE
=2.0V
0.5V
0.2V
72
1.0
3235107
CB
f=1MHz
72357
10
-- V
CB
C
°C
--25
°C
25
IT10576
1.0V
0.7V
IT10578
IT10580
1000
7
5
3
FE
2
100
7
5
DC Current Gain, h
3
2
10
1000
-- MHz
T
100
Gain-Bandwidth Product, f
10
0.01
7
5
3
2
7
5
3
2
0.01
7
5
3
2
325
325
(sat) -- V
CE
0.1
7
5
3
2
Collector-to-Emitter
Saturation Voltage, V
0.01
7
5
325
0.01
3
2
(sat) -- V
BE
1.0
7
5
3
Base-to-Emitter
Saturation Voltage, V
hFE -- I
Ta=75
7235
0.1
C
C
°
C
°
25
C
°
--25
72
1.0
3235107
Collector Current, IC -- A
f
-- I
f
-- I
T
C
T
C
VCE=10V
73257 23
0.1
1.0
Collector Current, IC -- A
VCE(sat) -- I
C
IC / IB=20
°C
Ta=75
7235
0.1
°C
--25
°C
25
723 235107
1.0
Collector Current, IC -- A
VBE(sat) -- I
C
IC / IB=20
°C
Ta= --25
°C
75
°C
25
VCE=2V
IT10577
57
IT10579
IT10581
10
0.01
0.01
325
7235
0.1
Collector Current, I
723 235107
1.0
-- A
C
IT10582
2
0.01
325
7235
0.1
Collector Current, IC -- A
723 235107
1.0
No. A0279-3/4
IT10583
2SC6082
5
3
ICP=20A
2
IC=15A
10
7
5
-- A
3
C
2
1.0
7
5
3
2
0.1
Collector Current, I
7
5
3
Tc=25
2
0.01
°C
Single pulse
Collector-to-Emitter Voltage, VCE -- V
30
25
-- W
C
20
15
Forward Bias A S O
1.00.1
100ms
22537
1ms
10ms
DC operation
537
10
PC -- Tc
P
T
=500µs
2537
100
IT10584
2.5
2.0
-- W
C
1.5
1.0
0.5
Collector Dissipation, P
0
2006040 80 100 120 140 160
Ambient Temperature, Ta -- °C
PC -- Ta
No heat sink
IT10560
10
Collector Dissipation, P
5
0
2006040 80 100 140120 160
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
Case Temperature, Tc -- °C
IT10561
This catalog provides information as of March, 2006. Specifications and information herein are subject
to change without notice.
No. A0279-4/4
PS
Loading...