SANYO 2SC6082 DATA SHEET

Ordering number : ENA0279

2SC6082

SANYO Semiconductors

DATA SHEET

NPN Epitaxial Planar Silicon Transistor

2SC6082

50V / 15A High-Speed Switching Ap­plications

Applications

•

High-speed switching applications (switching regulator, driver circuit).

Features

•

Adoption of MBIT process.

•

Large current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High-speed switching.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CES
CEO
EBO

C

CP

B

C

PW≤10µs, duty cycle≤10% 20 A

Tc=25°C25W

60 V
60 V
50 V

6V

15 A

3A
2W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

DC Current Gain

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

CBO
EBO

hFE1VCE=2V, IC=330mA 200 560
hFE2VCE=2V, IC=10A 50

Ratings

min typ max
VCB=40V , IE=0A 10 µA
VEB=4V, IC=0A 10 µA

Continued on next page.

72606 / 31506FA MS IM TB-00002089

Unit

No. A0279-1/4

2SC6082

Continued from preceding page.

Parameter Symbol Conditions

Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V, f=1MHz 85 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=7.5A, IB=375mA 200 400 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=7.5A, IB=375mA 1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t

(BR)CBOIC
(BR)CESIC
(BR)CEOIC
(BR)EBOIE

on

stg

VCE=10V, IC=2A 195 MHz

T

=100µA, IE=0A 60 V
=100µA, RBE=0Ω 60 V
=1mA, RBE=∞ 50 V

=100µA, IC=0A 6 V
See specified Test Circuit. 52 ns
See specified Test Circuit. 560 ns
See specified Test Circuit. 37 ns

f

min typ max

Package Dimensions Switching Time Test Circuit

unit : mm
7508-002

PW=20µs
D.C.≤1%

INPUT

V

R

50Ω

VBE= --5V

IC=20IB1= --20IB2=5A

18.1

5.6

10.0

1.6

1.2

0.75

3.2

3.5

7.2

16.0

14.0

4.5

2.8

0.7

Ratings

I

B1

I

B2

R

B

+

100µF 470µF

+

VCC=25V

OUTPUT

R

L

Unit

123

2.55 2.55

15

From a top

14

300mA

13

250mA
200mA

12

180mA

11

150mA

-- A

120mA

10

C

100mA

9
8
7
6
5
4

Collector Current, I

3
2
1

0

0.40 0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8

Collector-to-Emitter Voltage, VCE -- V

90mA

2.4

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220ML

IC -- V

CE

60mA

70mA

80mA

50mA

40mA

30mA

20mA

10mA

IB=0mA

IT10574

10

9

8

7

-- A
C

6

5

4

3

Collector Current, I

2

1
0

80mA

70mA

60mA

100mA

0.20 0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Collector-to-Emitter Voltage, VCE -- V

90mA

IC -- V

CE

50mA

40mA

30mA

20mA

15mA

10mA

5mA

IB=0mA

IT10575

No. A0279-2/4