Sanyo 2sc5980 Datasheet

Download

Page 1

Ordering number : ENN8091

2SC5980

NPN Epitaxial Planar Silicon Transistor

High-Current Switching Applications

Applications

•

DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.

Features

•

Adoption of FBET, MBIT process.

•

High current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High-speed switching.

•

Narrow hFE width.

•

High allowable power dissipation.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V Collector-to-Emitter Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I Base Current I

Collector Dissipation P Junction Temperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO CES CEO EBO

Tc=25°C15W

100 V 100 V

50 V

6V 8A

11 A

1.0 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h

CBO EBO

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max VCB=40V, IE=0 0.1 µA VEB=4V, IC=0 0.1 µA VCE=2V, IC=500mA 250 400

Continued on next page.

21405EA TS IM TB-00000320

Unit

No.8091-1/4

Page 2

2SC5980

6.5

Continued from preceding page.

Parameter Symbol Conditions

Gain-Bandwidth Product f Output Capacitance Cob VCB=10V, f=1MHz 28 pF

Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) IC=2A, IB=40mA 0.83 1.2 V

Collector-to-Base Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Emitter-to-Base Breakdown Voltage V Turn-ON Time t Storage Time t Fall Time t

(BR)CBOIC (BR)CESIC (BR)CEOIC (BR)EBOIE

stg

VCE=10V, IC=500mA 330 MHz

IC=3.5A, IB=175mA 125 190 mV IC=2A, IB=40mA 100 150 mV

=10µA, IE=0 100 V =100µA, RBE=∞ 100 V =1mA, RBE=∞ 50 V

=10µA, IC=0 6 V See specified Test Circuit. 30 ns See specified Test Circuit. 420 ns See specified Test Circuit. 25 ns

Package Dimensions Package Dimensions

unit : mm unit : mm 2045B 2044B

Ratings

min typ max

Unit

6.5

5.0

0.85

0.7

0.6

2.3 2.3

0.8

2.3

1.5

7.0

5.5

1.6

7.5

0.5

Switching Time Test Circuit

PW=20µs D.C.≤1%

INPUT

0.5

1.2

1 : Base 2 : Collector 3 : Emitter 4 : Collector

SANYO : TP

OUTPUT

5.0

0.85

1243

0.6

2.3 2.3

2.3

1.55.5

7.0

0.5

2.5

0.8

0 to 0.2

0.5

1.2

1 : Base 2 : Collector 3 : Emitter 4 : Collector

SANYO : TP-FA

50Ω

VBE= --5V

470µF100µF

VCC=25V

IC=20IB1= --20IB2=2.5A

No.8091-2/4

Page 3

-- A C

Collector Current, I

0.20 0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Collector-to-Emitter Voltage, V

1000

DC Current Gain, h

100

0.01

325

-- V

100mA

80mA

60mA

40mA

30mA

20mA

15mA

10mA

5mA

IB=0

-- I

IT08219

-- V

VCE=2V

Ta=75

°C

--25

°C

73257 23

0.1

1.0

Collector Current, IC -- A

Cob -- V

IT08221

f=1MHz

2SC5980

-- A C

Collector Current, I

1000

-- MHz T

100

Gain-Bandwidth Product, f

10 0.01

-- V

VCE=2V

0 0.2 0.4 0.6 0.8 1.21.11.00.1 0.3 0.5 0.7 0.9

Base-to-Emitter Voltage, V

7 5

3 2

7 5

3 2

325

73257 23

0.1

°C

Ta=75°C

--25

-- I

Collector Current, IC -- A

IC / IB=20

VCE(sat) -- I

-- V

1.0

IT08220

VCE=10V

IT08222

100

-- pF

Output Capacitance, Cob

325

Collector-to-Base Voltage, V

3 2

1.0 7 5

(sat) -- V

3 2

0.1 7 5

Collector-to-Emitter

Saturation Voltage, V

0.01

325

73257 231057

1.0

VCE(sat) -- I

-- V

IT08223

IC / IB=50

°C

Ta=75

73257 23

0.1

Collector Current, I

--25°C

°C

IT08225

1.0

-- A

3 2

(sat) -- V

0.1 7 5

Collector-to-Emitter

Saturation Voltage, V

0.01

100

0.01

(sat) -- V

1.0

Base-to-Emitter

Saturation Voltage, V

10 0.01

°C

Ta=75

°C

--25

°C

325

73257 23

0.1

1.0

Collector Current, IC -- A

VBE(sat) -- I

Ta= --25

°C

325

73257 23

0.1

°C

1.0

Collector Current, IC -- A

IT08224

IC / IB=50

IT08226

100.1

No.8091-3/4

Page 4

ICP=11A

7 5

3 2

-- A C

1.0 7

5 3

0.1 7

Collector Current, I

5 3 2

0.01

IC=8A

Tc=25°

Single Pulse

Collector-to-Emitter Voltage, VCE -- V

16 15 14

-- W C

A S O

µs

100ms

10ms

DC Operation (Tc=25

1ms

DC Operation (Ta=25

1.00.1 10 100

-- Tc

500

100µs

µs

253725372537

2SC5980

IT08227

1.2

1.0

-- W C

0.8

0.6

0.4

Collector Dissipation, P

0.2

2006040 80 100 140120 160

Ambient Temperature, Ta --

-- Ta

No heat sink

IT02972

Collector Dissipation, P

2006040 80 100 140120 160

Case Temperature, Tc --

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

IT02973

This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice.

No.8091-4/4