Sanyo 2sc5899 Datasheet

Page 1
Ordering number : ENN7538
2SC5899
NPN Triple Diffused Planar Silicon Transistor
2SC5899
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
•
High speed.
• High breakdown voltage(V
• Adoption of MBIT process.
CBO
=1700V).
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I
Collector Dissipation P Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO CEO EBO
C
CP
C
Tc=25°C95W
Package Dimensions
unit : mm
2174A
[2SC5899]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
5.45
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PMLH
1700 V
800 V
5V 15 A 35 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
I
Collector Cutoff Current Collector-to-Emitter Breakdown Voltage V(
Emitter Cutoff Current I
CBO
I
CES
BR)CEO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max VCB=800V, IE=0 10 µA VCE=1700V , RBE=0 1.0 mA IC=10mA, RBE=∞ 800 V VEB=4V, IC=0 1.0 mA
Unit
Continued on next page.
31504 TS IM TA-100536
No.7538-1/4
Page 2
2SC5899
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=10A, IB=2.5A 1.5 V Storage Time t Fall Time t
hFE1VCE=5V, IC=1A 15 hFE2VCE=5V, IC=11A 4 7
VCE(sat) IC=10A, IB=2.5A 3 V
stg
IC=7A, IB1=0.9A, IB2=--3.6A 3.0 µs IC=7A, IB1=0.9A, IB2=--3.6A 0.2 µs
f
Switching Time Test Circuit
I
PW=20µs D.C.≤1%
B1
I
B2
OUTPUT
Ratings
min typ max
Unit
INPUT
12 11 10
A
9
--
8
C
7 6 5 4 3
Collector Current, I
2 1
0
12 5634 78910
0
50Ω
V
R
I
C -- VCE
2.0A
R
B
+
100µF 470µF
1.8A
Collector-to-Emitter Voltage, V
h
100
7 5
Ta=120°C
3
FE
2
10
7 5
DC Current Gain, h
3 2
1.0
0.1 1.0 10
25°C
--40°C
FE -- IC
22335723 57
Collector Current, I
C --
VCC=200VVBE= --5V
1.6A
CE --
A
+
RL=28.6Ω
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0.1A
IB=0
V
IT06263
VCE=5V
IT06265
I
16
VCE=5V
14
A
12
-­C
10
8
6
4
Collector Current, I
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
C -- VBE
Ta=120°C
25°C
Base-to-Emitter V oltage, VBE -- V
10
7 5
3 2
1.0
(sat) -- V
7
CE
5 3
2
0.1 7 5
3
Collector-to-Emitter
Saturation V oltage, V
2
0.01
IC / IB=5
Ta= --40°C
120°C
VCE(sat) -- I
25°C
Collector Current, I
1.0 100.1
C
23 5723 57
C --
--40°C
A
°C
Ta= --40
IT06264
°C
25
120°C
23
IT06266
No.7538-2/4
Page 3
2SC5899
10
7 5
3 2
SW Time -- I
t
stg
C
VCC=200V IC / IB=8 IB2 / IB1=4 R load
10
7 5
3 2
SW Time -- I
t
stg
B2
VCC=200V IC=7A IB1=0.9A R load
1.0 7 5
3
Switching Time, SW Time -- µs
2
0.1
0.1 1.0
100
7
ICP=35A
5 3
IC=15A
2
10
7
-- A
5
C
3 2
1.0 7 5
3 2
0.1
Collector Current, I
7 5
3
Tc=25°C
2
Single pulse
0.01 23 571023 57 23 57
1.0
Collector Current, IC -- A
Forward Bias A S O
P
C
=95W
t
f
23 5723 57
DC operation
10ms
100
Collector-to-Emitter Voltage, VCE -- V
3.5
3.0
-- W
2.5
C
2.0
1.5
1.0
Collector Dissipation, P
0.5
0
0 20 40 60 80 100 120 140 160
P
No heat sink
C --
Ta
Ambient Temperature, Ta -- °C
1.0 7 5
3
Switching Time, SW Time -- µs
2
23
10
IT06267
P
T
=
100
µ
300
s
µ
s
1ms
1000
IT06269 IT06270
IT06271
0.1
23 57
Base Current, IB2 -- A
100
7 5
3 2
-- A
10
C
7 5
3 2
1.0 7 5
Collector Current, I
3 2
0.1 100 1000
Reverse Bias A S O
23 57 32
Collector-to-Emitter Voltage, VCE -- V
100
95 90
80
-- W
70
C
60
50
40
30
20
Collector Dissipation, P
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
P
C --
t
f
23 57
1.00.1
Tc
10
IT06268
L=500µH IB2= --3A Tc=25°C Single pulse
IT06272
No.7538-3/4
Page 4
2SC5899
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice.
No.7538-4/4
PS
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