Sanyo 2SC5808 Specifications
Ordering number : ENN7079
2SC5808
NPN Triple Diffused Planar Silicon Transistor
2SC5808
Switching Power Supply Applications
Features
• High breakdown voltage.
•
High speed switching.
• Wide ASO.
• Adoption of MBIT process.
Package Dimensions
unit : mm
2045B
[2SC5808]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
1.5
5.5
1.6
Package Dimensions
unit : mm
2044B
7.0
7.5
2.3
0.5
0.5
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SC5808]
6.5
5.0
4
0.85
12
0.6
2.3 2.3
0.8
3
1.55.5
7.0
2.5
0.5
1.2
0 to 0.2
2.3
0.5
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2501 TS IM TA-3412
No.7079-1/4
2SC5808
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CES
CEO
EBO
C
CP
B
C
PW≤300µs, duty cycle≤10% 5 A
Tc=25°C15W
Electrical Characteristics at Ta=25°C
700 V
700 V
400 V
8V
2.5 A
1.2 A
1W
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain hFE2VCE=5V, IC=1.2A 10
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 20 pF
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=1.2A, IB=0.24A 1.5 V
Collector-to-Base Breakdown Voltage V(
Collector-to-Emitter Breakdown Voltage V(
Emitter-to-Base Breakdown Voltage V(
Turn-On Time t
Storage Time t
Fall Time t
CBO
EBO
hFE1VCE=5V, IC=0.3A 20 50
hFE3VCE=5V, IC=1mA 10
VCE(sat) IC=1.2A, IB=0.24A 0.8 V
BR)CBO
BR)CEO
BR)EBO
on
stg
VCB=400V, IE=0 10 µA
VEB=5V, IC=0 10 µA
VCE=10V, IC=0.3A 20 MHz
T
IC=1mA, IE=0 700 V
IC=5mA, RBE=∞ 400 V
IE=1mA, IC=0 8 V
VCC=200V, IC=1.5A, IB1=0.3A,
IB2=--0.6A, RL=133Ω
VCC=200V, IC=1.5A, IB1=0.3A,
IB2=--0.6A, RL=133Ω
VCC=200V, IC=1.5A, IB1=0.3A,
f
IB2=--0.6A, RL=133Ω
Ratings
min typ max
0.5 µs
2.5 µs
0.25 µs
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
B1
I
B2
OUTPUT
Unit
INPUT
V
50Ω
R
R
100µF 470µF
B
+
R
L
+
VCC=200VVBE= --5V
No.7079-2/4
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