
Ordering number : ENN6994
2SC5792
NPN Triple Diffused Planar Silicon Transistor
2SC5792
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
•
High speed.
• High breakdown voltage(V
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
CBO
=1600V).
Package Dimensions
unit : mm
2174A
[2SC5792]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C85W
5.45
SANYO : TO-3PMLH
1600 V
800 V
5V
15 A
35 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
I
Collector Cutoff Current
Collector-to-Emitter Breakdown Voltage V(
Emitter Cutoff Current I
CBO
I
CES
BR)CEO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=800V, IE=0 10 µA
VCE=1600V , RBE=0 1.0 mA
IC=10mA, IB=∞ 800 V
VEB=4V, IC=0 1.0 mA
Unit
Continued on next page.
62001 TS IM TA-3325
No.6994-1/4

2SC5792
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=10A, IB=2.5A 1.5 V
Storage Time t
Fall Time t
hFE1VCE=5V, IC=1A 10
hFE2VCE=5V, IC=11A 4 7
VCE(sat) IC=10A, IB=2.5A 3 V
stg
IC=7A, IB1=0.9A, IB2=--3.5A 3.0 µs
IC=7A, IB1=0.9A, IB2=--3.5A 0.2 µs
f
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
B1
I
B2
OUTPUT
Ratings
min typ max
Unit
INPUT
50Ω
14
12
A
10
--
V
R
I
C -- VCE
1.2A
R
B
+
100µF 470µF
1.6A
1.4A
C
8
6
4
Collector Current, I
2
0
12 5634 78910
0
Collector-to-Emitter Voltage, V
h
5
3
Ta=120°C
FE
2
25°C
°C
--40
10
7
DC Current Gain, h
5
3
23 57 2 2357
0.1 1.0 10
FE -- IC
Collector Current, I
C --
+
VCC=200VVBE= --2V
1.8A
CE --
A
R
L
28.6Ω
2.0A
1.0A
0.8A
0.6A
0.4A
0.2A
0.1A
IB=0
V
IT03563
VCE=5V
IT03565
16
VCE=5V
14
A
12
-C
10
8
6
4
Collector Current, I
2
0
0
10
IC / IB=5
7
5
3
2
(sat) -- V
1.0
CE
7
5
3
2
Ta= --40
0.1
Collector-to-Emitter
Saturation V oltage, V
7
5
120
3
0.1
I
C -- VBE
25°C
Ta=120°C
0.2 0.4 0.6 0.8 1.0 1.2
--40°C
Base-to-Emitter V oltage, VBE -- V
VCE(sat) -- I
C
Ta= --40
°C
°C
25°C
23 57 2 2357
1.0 10
Collector Current, I
C --
A
No.6994-2/4
IT03564
C
°
25°C
°C
120
IT03566

5
3
2
1.0
7
5
3
VCC=200V
2
Switching Time, SW Time -- µs
IC / IB1=8
IB2 / IB1=4
R load
0.1
10
-- A
C
1.0
0.1
Collector Current, I
0.01
23 57 2 2357
7
ICP=35A
5
3
IC=15A
2
7
5
3
2
7
5
3
2
7
5
3
Tc=25°C
2
Single pulse
23 571023 57 23 57
1.0
Collector-to-Emitter Voltage, VCE -- V
4.0
3.5
3.0
-- W
C
2.5
2.0
1.5
1.0
Collector Dissipation, P
0.5
0
0
Ambient Temperature, Ta -- °C
SW Time -- I
t
stg
1.00.1
Collector Current, IC -- A
C
t
f
Forward Bias A S O
P
C
=85W
DC operation
100
P
No heat sink
604020
C --
80
Ta
1ms
10ms
2SC5792
10
7
5
3
2
1.0
7
5
3
Switching Time, SW Time -- µs
2
10
IT03567
100µs
300
µs
1000
IT03569 IT03570
160120 140100
IT03571
0.1
7
5
3
2
10
-- A
7
C
5
3
2
1.0
7
5
Collector Current, I
3
2
0.1
100 1000
90
85
80
70
-- W
C
60
50
40
30
20
Collector Dissipation, P
10
0
0
SW Time -- I
23 57 23 57
Base Current, IB2 -- A
Reverse Bias A S O
23 57 2
Collector-to-Emitter Voltage, VCE -- V
P
C --
4020
Case Temperature, Tc -- °C
B2
VCC=200V
t
stg
IC=7A
IB1=0.9A
R load
t
f
1.00.1 10
L=500µH
IB2= --3A
Tc=25°C
Single pulse
Tc
100 12060 80
140
IT03568
160
IT03572
No.6994-3/4

2SC5792
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
No.6994-4/4
PS