Sanyo 2SC5792 Specifications

Ordering number : ENN6994

2SC5792

NPN Triple Diffused Planar Silicon Transistor

2SC5792

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

•

High speed.

• High breakdown voltage(V

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

CBO

=1600V).

Package Dimensions

unit : mm

2174A

[2SC5792]

3.4

16.0

5.0

2.8

0.7

22.0

2.0

20.4

3.5

21.0

4.0

123

5.45

5.6

3.1

8.0

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C85W

5.45

SANYO : TO-3PMLH

1600 V

800 V

5V
15 A
35 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

I

Collector Cutoff Current
Collector-to-Emitter Breakdown Voltage V(

Emitter Cutoff Current I

CBO

I

CES

BR)CEO

EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VCE=1600V , RBE=0 1.0 mA
IC=10mA, IB=∞ 800 V
VEB=4V, IC=0 1.0 mA

Unit

Continued on next page.

62001 TS IM TA-3325

No.6994-1/4

2SC5792

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage VBE(sat) IC=10A, IB=2.5A 1.5 V
Storage Time t
Fall Time t

hFE1VCE=5V, IC=1A 10
hFE2VCE=5V, IC=11A 4 7

VCE(sat) IC=10A, IB=2.5A 3 V

stg

IC=7A, IB1=0.9A, IB2=--3.5A 3.0 µs
IC=7A, IB1=0.9A, IB2=--3.5A 0.2 µs

f

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

min typ max

Unit

INPUT

50Ω

14

12

A

10

--

V

R

I

C -- VCE

1.2A

R

B

+

100µF 470µF

1.6A

1.4A

C

8

6

4

Collector Current, I

2

0

12 5634 78910

0

Collector-to-Emitter Voltage, V

h

5

3

Ta=120°C

FE

2

25°C

°C

--40

10

7

DC Current Gain, h

5

3

23 57 2 2357

0.1 1.0 10

FE -- IC

Collector Current, I

C --

+

VCC=200VVBE= --2V

1.8A

CE --

A

R

L

28.6Ω

2.0A

1.0A

0.8A

0.6A

0.4A

0.2A

0.1A
IB=0

V

IT03563

VCE=5V

IT03565

16

VCE=5V

14

A

12

-­C

10

8

6

4

Collector Current, I

2

0

0

10

IC / IB=5

7
5

3
2

(sat) -- V

1.0

CE

7
5

3
2

Ta= --40

0.1

Collector-to-Emitter

Saturation V oltage, V

7
5

120

3

0.1

I

C -- VBE

25°C

Ta=120°C

0.2 0.4 0.6 0.8 1.0 1.2

--40°C

Base-to-Emitter V oltage, VBE -- V

VCE(sat) -- I

C

Ta= --40

°C

°C

25°C

23 57 2 2357

1.0 10

Collector Current, I

C --

A

No.6994-2/4

IT03564

C

°

25°C

°C

120

IT03566