
Ordering number : ENN6993
2SC5791
NPN Triple Diffused Planar Silicon Transistor
2SC5791
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
•
High speed.
• High breakdown voltage(V
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
CBO
=1600V).
Specifications
Package Dimensions
unit : mm
2174A
[2SC5791]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
5.45
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C80W
1600 V
800 V
5V
10 A
25 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
I
Collector Cutoff Current
Collector-to-Emitter Breakdown Voltage V(
Emitter Cutoff Current I
CBO
I
CES
BR)CEO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=800V, IE=0 10 µA
VCE=1600V , RBE=0 1.0 mA
IC=10mA, RBE=∞ 800 V
VEB=4V, IC=0 1.0 mA
Unit
Continued on next page.
62001 TS IM TA-3324
No.6993-1/4

2SC5791
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=6.3A, IB=1.6A 1.5 V
Storage Time t
Fall Time t
hFE1VCE=5V, IC=1A 10
hFE2VCE=5V, IC=7A 4 7
VCE(sat) IC=6.3A, IB=1.6A 3 V
stg
IC=5A, IB1=0.8A, IB2=--2.5A 3.0 µs
IC=5A, IB1=0.8A, IB2=--2.5A 0.2 µs
f
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
B1
I
B2
OUTPUT
Ratings
min typ max
Unit
INPUT
50Ω
10
9
8
A
--
7
C
6
5
4
3
Collector Current, I
2
1
0
12 5634 78910
0
Collector-to-Emitter Voltage, V
100
7
5
Ta=120°C
3
FE
10
DC Current Gain, h
1.0
25°C
2
--40°C
7
5
3
2
0.1 1.0 10
2 3 57 2 3 57
Collector Current, I
R
V
R
I
C -- VCE
1.8A
2.0A
h
FE -- IC
B
+
100µF 470µF
+
VCC=200VVBE= --2V
1.6A
CE --
A
C --
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0.1A
IB=0
RL=40Ω
V
IT03543
VCE=5V
IT03545
10
VCE=5V
9
8
A
--
7
C
6
5
4
3
Collector Current, I
2
1
0
0
10
IC / IB=5
7
5
3
2
1.0
(sat) -- V
7
CE
5
3
2
Ta=
25°C
--40°C
0.1
7
5
120°C
3
Collector-to-Emitter
Saturation V oltage, V
2
0.01
0.1
I
C -- VBE
°C
°C
25°C
Ta=120
--40
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter V oltage, VBE -- V
VCE(sat) -- I
C
IT03544
°C
120°C
Ta= --40
25
23 57 23 57
Collector Current, I
1.0 10
C --
A
IT03546
No.6993-2/4
°C

2SC5791
10
7
5
3
2
SW Time -- I
t
stg
C
VCC=200V
IC / IB1=6
IB2 / IB1=3
R load
10
7
5
3
2
SW Time -- I
t
stg
B2
VCC=200V
IC=5A
IB1=0.8A
R load
1.0
7
5
3
Switching Time, SW Time -- µs
2
0.1
0.1
100
7
5
3
2
10
7
-- A
5
C
3
2
1.0
7
5
3
2
0.1
Collector Current, I
7
5
3
2
0.01
1.0
23 57 23 57
ICP=25A
IC=10A
Tc=25°C
Single pulse
23 571023 57 23 57
Collector-to-Emitter Voltage, VCE -- V
3.5
3.0
-- W
2.5
C
2.0
t
f
Collector Current, IC -- A
1.0
Forward Bias A S O
P
C
=80W
DC operation
P
C --
No heat sink
Ta
10ms
1ms
100
300µs
100µs
IT03547
IT03549
10
1000
1.0
7
5
3
Switching Time, SW Time -- µs
2
0.1
100
7
5
3
2
-- A
10
C
7
5
3
2
1.0
7
Collector Current, I
5
3
2
0.1
100 1000
23 57 23 57
0.1
Base Current, IB2 -- A
Reverse Bias A S O
23 57 2
t
f
1.0
Collector-to-Emitter Voltage, VCE -- V
90
80
70
-- W
C
60
50
P
C --
Tc
10
IT03548
L=500µH
IB2= --3A
Tc=25°C
Single pulse
IT03550
1.5
1.0
Collector Dissipation, P
0.5
0
0
Ambient Temperature, Ta -- °C
40
30
20
Collector Dissipation, P
10
0
604020
80
160120 140100
IT03551
0
4020
100 12060 80
Case Temperature, Tc -- °C
140
160
IT03552
No.6993-3/4

2SC5791
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
No.6993-4/4
PS