Sanyo 2SC5778 Specifications

Page 1
Ordering number : ENN6992
2SC5778
NPN Triple Diffused Planar Silicon Transistor
2SC5778
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
•
High speed.
• High breakdown voltage(V
• Adoption of MBIT process.
• On-chip damper diode.
CBO
=1600V).
Specifications
Package Dimensions
unit : mm
2174A
[2SC5778]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
5.45
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PMLH
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I
Collector Dissipation P Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO CEO EBO
C
CP
C
Tc=25°C85W
1600 V
800 V
5V 15 A 35 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
I
Collector Cutoff Current Emitter Cutoff Current I
CBO
I
CES EBO
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max VCB=800V, IE=0 10 µA VCE=1600V , RBE=0 1.0 mA VEB=4V, IC=0 40 200 mA
Unit
Continued on next page.
62001 TS IM TA-3321
No.6992-1/4
Page 2
2SC5778
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=10A, IB=2.5A 1.5 V Storage Time t Fall Time t Diode Forward Voltage V
hFE1VCE=5V, IC=1A 8 hFE2VCE=5V, IC=11A 4 7
VCE(sat) IC=10A, IB=2.5A 3.0 V
stg
IC=7A, IB1=0.9A, IB2=--3.5A 3.0 µs IC=7A, IB1=0.9A, IB2=--3.5A 0.2 µs
f
IEC=12A 2.2 V
F
Switching Time Test Circuit
I
PW=20µs D.C.≤1%
B1
I
B2
OUTPUT
Ratings
min typ max
Unit
INPUT
50Ω
14
12
A
10
--
R
V
R
I
C -- VCE
B
+
100µF 470µF
1.8A
2.0A
C
8
6
4
Collector Current, I
2
0
12 5634 78910
0
Collector-to-Emitter Voltage, V
h
100
7 5
3
FE
2
10
7 5
DC Current Gain, h
3 2
1.0
0.1 1.0 10
Ta=120°C
25°C
--40
23 57 2 2357
FE -- IC
°C
Collector Current, I
C --
1.6A
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0.1A
IB=0
CE --
A
VCC=200VVBE= --2V
+
RL=28.6Ω
V
IT03523
VCE=5V
IT03525
16
14
A
12
-­C
10
8
6
4
Collector Current, I
2
0
0
10
IC / IB=5
7 5
3 2
(sat) -- V
1.0
CE
7 5
3 2
25°C
0.1
Collector-to-Emitter
Saturation V oltage, V
7 5
3
0.1
I
C -- VBE
VCE=5V
25°C
Ta=120°C
0.2 0.4 0.6 0.8 1.0 1.41.2
--40°C
Base-to-Emitter V oltage, VBE -- V
VCE(sat) -- I
C
°C
120
Ta= --40°C
120°C
23 57 2 2357
1.0 10
Collector Current, I
C --
A
IT03524
C
°
Ta= --40
25°C
IT03526
No.6992-2/4
Page 3
2SC5778
5
3
2
1.0 7
5
3
2
Switching Time, SW Time -- µs
SW Time -- I
t
t
stg
f
C
VCC=200V IC / IB1=8 IB2 / IB1=4 R load
10
7 5
3 2
1.0 7
5
3
Switching Time, SW Time -- µs
2
SW Time -- I
t
stg
t
f
B2
VCC=200V IC=7A IB1=0.9A R load
0.1 357 23 2357
2
100
7
ICP=35A
5 3
IC=15A
2
10
7
-- A
5
C
3 2
1.0
7 5
3 2
0.1
Collector Current, I
7 5
3
Tc=25°C
2
Single pulse
0.01 23 571023 57 23 57
1.0
Collector-to-Emitter Voltage, VCE -- V
4.0
3.5
3.0
-- W C
2.5
2.0
1.5
1.0
Collector Dissipation, P
0.5
0
0
Ambient Temperature, Ta -- °C
1.0
Collector Current, IC -- A
Forward Bias A S O
P
C
=85W
10ms
DC operation
100
P
604020
Ta
C --
No heat sink
80
1ms
0.1
10
IT03527
100µs
300µs
1000
IT03529 IT03530
160120 140100
IT03531
23 57 23 57
100
7 5
3 2
-- A
10
C
7 5
3 2
1.0 7 5
Collector Current, I
3 2
0.1
100 1000
23 57 32
Collector-to-Emitter Voltage, VCE -- V
90 85 80
70
-- W C
60
50
40
30
20
Collector Dissipation, P
10
0
0
1.0
Base Current, IB2 -- A
Reverse Bias A S O
P
4020
Case Temperature, Tc -- °C
C --
Tc
100 12060 80
IT03528
L=500µH IB2= --3A Tc=25°C Single pulse
140
IT03532
10
160
No.6992-3/4
Page 4
2SC5778
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice.
No.6992-4/4
PS
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