Sanyo 2SC5777 Specifications

Ordering number : ENN6991

2SC5777

NPN Triple Diffused Planar Silicon Transistor

2SC5777

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

•

High speed.

• High breakdown voltage (V

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.

CBO

=1600V).

Specifications

Package Dimensions

unit : mm

2174A

[2SC5777]

3.4

16.0

5.0

2.8

0.7

22.0

2.0

20.4

3.5

21.0

5.45

4.0

123

5.45

5.6

3.1

8.0

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PMLH

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C80W

1600 V

800 V

5V
10 A
25 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

I

Collector Cutoff Current
Emitter Cutoff Current I

CBO

I

CES
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VCE=1600V , RBE=0 1.0 mA
VEB=4V, IC=0 40 200 mA

Unit

Continued on next page.

62001 TS IM TA-3323

No.6991-1/4

2SC5777

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage VBE(sat) IC=6.3A, IB=1.6A 1.5 V
Storage Time t
Fall Time t
Diode Forward Voltage V

hFE1VCE=5V, IC=1A 8
hFE2VCE=5V, IC=7A 4 7

VCE(sat) IC=6.3A, IB=1.6A 3.0 V

stg

IC=5A, IB1=0.8A, IB2=--2.5A 3.0 µs
IC=5A, IB1=0.8A, IB2=--2.5A 0.2 µs

f

IEC=8A 2.2 V

F

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

Unit

INPUT

10

9

8

A

--

7

C

6

5

4

3

Collector Current, I

2

1
0

12 5634 78910

0

Collector-to-Emitter Voltage, V

100

7
5

3

FE

2

50Ω

°C

V

R

I

C -- VCE

h

FE -- IC

R

B

+

100µF 470µF

1.6A

1.8A

2.0A

CE --

+

VCC=200VVBE= --2V

Ta=120

10

7
5

DC Current Gain, h

3
2

1.0

0.1 1.0 10

25°C

--40°C

23 57 23 57

Collector Current, I

C --

A

RL=40Ω

1.4A

1.2A

1.0A

0.8A

0.6A

0.4A

0.2A

0.1A

IB=0

V

IT03533

VCE=5V

IT03535

10

VCE=5V

9

8

A

7

-­C

6

5

4

3

Collector Current, I

2

1
0

0

10

IC / IB=5

7
5

3
2

1.0

(sat) -- V

7

CE

5
3

2

25°C

0.1
7
5

3

Saturation V oltage, V

2

0.01

0.1

120°C

Collector-to-Emitter

I

C -- VBE

°C

25°C

Ta=120°C

0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, V

VCE(sat) -- I

BE --

C

--40

V

IT03534

°C

Ta=120

Ta= --40

°C

23 57 23 57

Collector Current, I

1.0 10

C --

A

IT03536

No.6991-2/4

25°C

°C

--40

2SC5777

10

7
5

3
2

SW Time -- I

C

VCC=200V
IC / IB1=6
IB2 / IB1=3

t

stg

R load

10

7
5

3
2

SW Time -- I

t

stg

B2

VCC=200V
IC=5A
IB1=0.8A
R load

1.0
7

5

3

Switching Time, SW Time -- µs

2

0.1

357 2357

100

7
5

ICP=25A

3
2

IC=10A

10

7

-- A

5

C

3
2

1.0
7
5

3
2

0.1

Collector Current, I

7
5

3

Tc=25°C

2

Single pulse

0.01
23 571023 57 23 57

1.0

1.0

Collector Current, IC -- A

Forward Bias A S O

P

C

=80W

t

f

10ms

DC operation

100

300µs

1ms

Collector-to-Emitter Voltage, VCE -- V

P

Ta

3.5

3.0

-- W

2.5

C

2.0

C --

No heat sink

1.0
7

5

3

Switching Time, SW Time -- µs

2

0.1

10

IT03537

100µs

1000

IT03539 IT03540

357 2357

100

7
5

3
2

-- A

10

C

7
5

3
2

1.0

7
5

Collector Current, I

3
2

0.1
100 1000

Reverse Bias A S O

23 57 2

Collector-to-Emitter Voltage, VCE -- V

90

80

70

-- W
C

60

50

t

f

1.0

Base Current, IB2 -- A

P

C --

Tc

L=500µH
IB2= --3A
Tc=25°C
Single pulse

IT03538

1.5

1.0

Collector Dissipation, P

0.5

0

0

Ambient Temperature, Ta -- °C

40

30

20

Collector Dissipation, P

10

0

604020

80

160120 140100

IT03541

0

4020

100 12060 80

Case Temperature, Tc -- °C

140

160

IT03542

No.6991-3/4

2SC5777

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.

No.6991-4/4

PS