Sanyo 2SC5777 Specifications

Ordering number : ENN6991

2SC5777

NPN Triple Diffused Planar Silicon Transistor

2SC5777

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

•

High speed.

• High breakdown voltage (V

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.

CBO

=1600V).

Specifications

Package Dimensions

unit : mm

2174A

[2SC5777]

3.4

16.0

5.0

2.8

0.7

22.0

2.0

20.4

3.5

21.0

5.45

4.0

123

5.45

5.6

3.1

8.0

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PMLH

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C80W

1600 V

800 V

5V
10 A
25 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

I

Collector Cutoff Current
Emitter Cutoff Current I

CBO

I

CES
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VCE=1600V , RBE=0 1.0 mA
VEB=4V, IC=0 40 200 mA

Unit

Continued on next page.

62001 TS IM TA-3323

No.6991-1/4

2SC5777

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage VBE(sat) IC=6.3A, IB=1.6A 1.5 V
Storage Time t
Fall Time t
Diode Forward Voltage V

hFE1VCE=5V, IC=1A 8
hFE2VCE=5V, IC=7A 4 7

VCE(sat) IC=6.3A, IB=1.6A 3.0 V

stg

IC=5A, IB1=0.8A, IB2=--2.5A 3.0 µs
IC=5A, IB1=0.8A, IB2=--2.5A 0.2 µs

f

IEC=8A 2.2 V

F

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

Unit

INPUT

10

9

8

A

--

7

C

6

5

4

3

Collector Current, I

2

1
0

12 5634 78910

0

Collector-to-Emitter Voltage, V

100

7
5

3

FE

2

50Ω

°C

V

R

I

C -- VCE

h

FE -- IC

R

B

+

100µF 470µF

1.6A

1.8A

2.0A

CE --

+

VCC=200VVBE= --2V

Ta=120

10

7
5

DC Current Gain, h

3
2

1.0

0.1 1.0 10

25°C

--40°C

23 57 23 57

Collector Current, I

C --

A

RL=40Ω

1.4A

1.2A

1.0A

0.8A

0.6A

0.4A

0.2A

0.1A

IB=0

V

IT03533

VCE=5V

IT03535

10

VCE=5V

9

8

A

7

-­C

6

5

4

3

Collector Current, I

2

1
0

0

10

IC / IB=5

7
5

3
2

1.0

(sat) -- V

7

CE

5
3

2

25°C

0.1
7
5

3

Saturation V oltage, V

2

0.01

0.1

120°C

Collector-to-Emitter

I

C -- VBE

°C

25°C

Ta=120°C

0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, V

VCE(sat) -- I

BE --

C

--40

V

IT03534

°C

Ta=120

Ta= --40

°C

23 57 23 57

Collector Current, I

1.0 10

C --

A

IT03536

No.6991-2/4

25°C

°C

--40