Sanyo 2SC5776 Specifications

Ordering number : ENN6990

2SC5776

NPN Triple Diffused Planar Silicon Transistor

2SC5776

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

•

High speed.

• High breakdown voltage (V

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.

CBO

=1600V).

Specifications

Package Dimensions

unit : mm

2174A

[2SC5776]

3.4

16.0

5.0

2.8

0.7

22.0

2.0

20.4

3.5

21.0

5.45

4.0

123

5.45

5.6

3.1

8.0

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PMLH

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C65W

1600 V

800 V

5V
8A

16 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

I

Collector Cutoff Current
Emitter Cutoff Current I

CBO

I

CES
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VCE=1600V , RBE=0 1.0 mA
VEB=4V, IC=0 40 200 mA

Unit

Continued on next page.

62001 TS IM TA-3322

No.6990-1/4

2SC5776

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage VBE(sat) IC=4A, IB=1A 1.5 V
Storage Time t
Fall Time t
Diode Forward Voltage V

hFE1VCE=5V, IC=1A 8
hFE2VCE=5V, IC=4.5A 4 7

VCE(sat) IC=4A, IB=1A 3.0 V

stg

IC=3A, IB1=0.5A, IB2=--1.5A 3.0 µs
IC=3A, IB1=0.5A, IB2=--1.5A 0.2 µs

f

IEC=6.5A 2.2 V

F

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

Unit

INPUT

50Ω

9

8

7

A

--

6

C

5

4

3

Collector Current, I

2

1

0

12 5634 78910

0

Collector-to-Emitter Voltage, V

5

3

2

FE

10

7
5

3

DC Current Gain, h

2

1.0

0.1 1.0 10

°C

Ta=120

25°C

--40°C

23 57 23 57

R

V

B

R

100µF 470µF

I

C -- VCE

1.2A

h

FE -- IC

+

1.4A

Collector Current, I

1.6A

C --

+

VCC=200VVBE= --2V

1.8A

CE --

A

RL=66.7Ω

2.0A

1.0A

0.8A

0.6A

0.4A

0.2A

0.1A

IB=0

V

IT03553

VCE=5V

IT03555

9

8

7

A

--

6

C

5

4

3

Collector Current, I

2

1

0

0

10

IC / IB=5

7
5

3
2

(sat) -- V

CE

1.0
7
5

3
2

Saturation V oltage, V

0.1
7

5

0.1

120°C

Collector-to-Emitter

I

C -- VBE

VCE=5V

°C

Ta=120

25°C

--40°C

0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, V

VCE(sat) -- I

BE --

C

IT03554

V

C

°

Ta= --40

°C

25

Ta= --40°C

25°C

23 57 23 57

Collector Current, I

1.0 10

C --

A

IT03556

No.6990-2/4

120°C