Page 1
Ordering number : ENN6988
2SA2063 / 2SC5775
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SA2063 / 2SC5775
160V / 12A, AF90W Output Applications
Features
•
Large current capacitance.
•
Wide ASO and high durability against breakdown.
•
Adoption of MBIT process.
Specifications
( ) : 2SA2063
Package Dimensions
unit : mm
2022A
[2SA2063 / 2SC5775]
2.6
1.6
1.0
5.45
1
0.6
15.6
14.0
3.2
3.5
1.2
15.0
1.3
2.0
20.0 20.0
3
2
1.4
5.45
4.8
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C 130 W
(--)180 V
(--)160 V
(--)6 V
(--)12 A
(--)24 A
2.5 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain
CBO
EBO
hFE1VCE=(--)5V, IC=(--)1A 60 160
hFE2VCE=(--)5V, IC=(--)6A 35
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=(--)180V, IE=0 (--)0.1 mA
VEB=(--)4V, IC=0 (--)0.1 mA
Unit
Continued on next page.
62501 TS IM TA-3319, 3320
No.6988-1/4
Page 2
2SA2063 / 2SC5775
Continued from preceding page.
Parameter Symbol Conditions
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (340)170 pF
Base-to-Emitter Voltage V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)6A, IB=(--)0.6A
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t
BE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VCE=(--)5V, IC=(--)1A (10)15 MHz
T
VCE=(--)5A, IC=(--)6A 1.5 V
=(--)5mA, IE=0 (--)180 V
=(--)50mA, RBE=∞ (--)160 V
=(--)5mA, IC=0 (--)6 V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
f
min typ max
Switching Time Test Circuit
I
PW=20µs
D.C≤1%
B1
I
B2
OUTPUT
Ratings
(-- 0.3)0.2 (--)2.0
(0.45)0.56
(1.75)3.3
(0.25)0.4
Unit
V
µs
µs
µs
INPUT
50Ω
IC=10IB1= --10IB2=6A
For PNP, the polarity is reversed.
--16
2SA2063 2SC5775
--14
V
R
I
C
R
B
+
100µF 470µF
-- V
+
VCC=50VVBE= --2V
CE
RL=
8.33Ω
--500mA
--400mA
--12
-- A
C
--10
--8
--6
--4
Collector Current, I
--2
0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter V oltage, V
IC -- V
--12
BE
CE --
--300mA
--200mA
--100mA
--40mA
--20mA
IB=0
IT03391
V
2SA2063
VCE= --5V
--10
I
-- V
20
18
16
14
-- A
C
12
10
8
6
Collector Current, I
4
2
012345678910
C
Collector-to-Emitter V oltage, V
12
IC -- V
500mA
CE
BE
400mA
CE --
300mA
200mA
100mA
V
2SC5775
VCE=5V
10
40mA
20mA
IB=0
IT03392
-- A
--8
C
--6
°C
°C
25
--4
Ta=120°C
--40
Collector Current, I
--2
0
0 --0.5 --1.0 --1.5
Base-to-Emitter V oltage, VBE -- V
IT03393
-- A
8
C
6
C
°
C
C
°
4
Collector Current, I
2
0
0 0.5 1.0 1.5
Ta=120
°
25
--40
Base-to-Emitter V oltage, VBE -- V
IT03394
No.6988-2/4
Page 3
FE
100
2SA2063 / 2SC5775
h
-- I
3
2
7
5
FE
Ta=120
25
--40
C
2SA2063
C
°
°
C
°
C
VCE= --5V
FE
3
2
100
7
5
h
FE
Ta=120
25
--40
°
-- I
C
°
C
°
C
2SC5775
VCE=5V
C
3
DC Current Gain, h
2
10
--0.01 --0.1
--1.0
2SA2063
7
I
C / IB
5
3
(sat) -- V
2
CE
--0.1
7
5
3
Collector-to-Emitter
Saturation V oltage, V
2
--0.01
--0.01 --0.1
5
ICP=24A
3
2
IC=12A
10
7
5
-- A
3
C
2
1.0
7
5
3
2
0.1
Collector Current, I
7
5
Tc=25°C
3
Single pulse
2
(For PNP, minus sign is omitted.)
0.01
1.0 10
140
130
120
23 57
23 57
Collector Current, IC -- A
VCE(sat) -- I
=10
Ta=120
°
25
23 57
23 57
Collector Current, IC -- A
A S O
100ms
P
C
=130W
23 57
Collector-to-Emitter Voltage, V
23 57 23
P
-- Tc
C
23 57
--1.0
C
C
°
C
°
--40
C
23 57
--1.0
2SA2063 / 2SC5775
1ms
10ms
DC operation
100
-- V
CE
2SA2063 / 2SC5775
IT03395
IT03397
IT03399
--10
--10
3
DC Current Gain, h
2
10
23 57
0.01 0.1
1.0
2SC5775
7
I
=10
C / IB
5
3
(sat) -- V
2
CE
0.1
7
5
3
Collector-to-Emitter
Saturation V oltage, V
2
0.01
-- W
C
Collector Dissipation, P
23 57
0.01 0.1
3.0
2.5
2.0
1.5
1.0
0.5
0
2006040 80 100 140120 160
23 571023 57
1.0
Collector Current, IC -- A
VCE(sat) -- I
C
Ta=120°C
23 571023 57
1.0
Collector Current, IC -- A
P
-- Ta
C
2SA2063 / 2SC5775
No heat sink
Ambient Temperature, Ta -- °C
IT03396
--40°C
25°C
IT03398
IT03400
-- W
100
C
80
60
40
Collector Dissipation, P
20
0
2006040 80 100 140120 160
Case Temperature, Tc -- °C
IT03401
No.6988-3/4
Page 4
2SA2063 / 2SC5775
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
No.6988-4/4
PS
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