Sanyo 2SC5775 Specifications
Ordering number : ENN6988
2SA2063 / 2SC5775
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SA2063 / 2SC5775
160V / 12A, AF90W Output Applications
Features
•
Large current capacitance.
•
Wide ASO and high durability against breakdown.
•
Adoption of MBIT process.
Specifications
( ) : 2SA2063
Package Dimensions
unit : mm
2022A
[2SA2063 / 2SC5775]
2.6
1.6
1.0
5.45
1
0.6
15.6
14.0
3.2
3.5
1.2
15.0
1.3
2.0
20.0 20.0
3
2
1.4
5.45
4.8
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C 130 W
(--)180 V
(--)160 V
(--)6 V
(--)12 A
(--)24 A
2.5 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain
CBO
EBO
hFE1VCE=(--)5V, IC=(--)1A 60 160
hFE2VCE=(--)5V, IC=(--)6A 35
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=(--)180V, IE=0 (--)0.1 mA
VEB=(--)4V, IC=0 (--)0.1 mA
Unit
Continued on next page.
62501 TS IM TA-3319, 3320
No.6988-1/4
2SA2063 / 2SC5775
Continued from preceding page.
Parameter Symbol Conditions
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (340)170 pF
Base-to-Emitter Voltage V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)6A, IB=(--)0.6A
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t
BE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VCE=(--)5V, IC=(--)1A (10)15 MHz
T
VCE=(--)5A, IC=(--)6A 1.5 V
=(--)5mA, IE=0 (--)180 V
=(--)50mA, RBE=∞ (--)160 V
=(--)5mA, IC=0 (--)6 V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
f
min typ max
Switching Time Test Circuit
I
PW=20µs
D.C≤1%
B1
I
B2
OUTPUT
Ratings
(-- 0.3)0.2 (--)2.0
(0.45)0.56
(1.75)3.3
(0.25)0.4
Unit
V
µs
µs
µs
INPUT
50Ω
IC=10IB1= --10IB2=6A
For PNP, the polarity is reversed.
--16
2SA2063 2SC5775
--14
V
R
I
C
R
B
+
100µF 470µF
-- V
+
VCC=50VVBE= --2V
CE
RL=
8.33Ω
--500mA
--400mA
--12
-- A
C
--10
--8
--6
--4
Collector Current, I
--2
0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter V oltage, V
IC -- V
--12
BE
CE --
--300mA
--200mA
--100mA
--40mA
--20mA
IB=0
IT03391
V
2SA2063
VCE= --5V
--10
I
-- V
20
18
16
14
-- A
C
12
10
8
6
Collector Current, I
4
2
012345678910
C
Collector-to-Emitter V oltage, V
12
IC -- V
500mA
CE
BE
400mA
CE --
300mA
200mA
100mA
V
2SC5775
VCE=5V
10
40mA
20mA
IB=0
IT03392
-- A
--8
C
--6
°C
°C
25
--4
Ta=120°C
--40
Collector Current, I
--2
0
0 --0.5 --1.0 --1.5
Base-to-Emitter V oltage, VBE -- V
IT03393
-- A
8
C
6
C
°
C
C
°
4
Collector Current, I
2
0
0 0.5 1.0 1.5
Ta=120
°
25
--40
Base-to-Emitter V oltage, VBE -- V
IT03394
No.6988-2/4
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