Sanyo 2SC5774 Specifications
Ordering number : ENN6987
2SA2062 / 2SC5774
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SA2062 / 2SC5774
140V / 10A, AF 70W Output Applications
Features
•
Large current capacitance.
•
Wide ASO and high durability against breakdown.
•
Adoption of MBIT process.
Specifications
( ) : 2SA2062
Package Dimensions
unit : mm
2022A
[2SA2062 / 2SC5774]
2.6
1.6
1.0
5.45
1
0.6
15.6
14.0
3.2
3.5
1.2
15.0
1.3
2.0
20.0 20.0
3
2
1.4
5.45
4.8
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C 110 W
(--)160 V
(--)140 V
(--)6 V
(--)10 A
(--)20 A
2.5 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain
CBO
EBO
hFE1VCE=(--)5V, IC=(--)1A 60 160
hFE2VCE=(--)5V, IC=(--)5A 35
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=(--)160V, IE=0 (--)0.1 mA
VEB=(--)4V, IC=0 (--)0.1 mA
Unit
Continued on next page.
62501 TS IM TA-3317, 3318
No.6987-1/4
2SA2062 / 2SC5774
Continued from preceding page.
Parameter Symbol Conditions
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (280)140 pF
Base-to-Emitter Voltage V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)0.5A
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t
BE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VCE=(--)5V, IC=(--)1A (10)15 MHz
T
VCE=(--)5A, IC=(--)5A 1.5 V
=(--)5mA, IE=0 (--)160 V
=(--)50mA, RBE=∞ (--)140 V
=(--)5mA, IC=0 (--)6 V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
f
min typ max
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
B1
I
B2
OUTPUT
Ratings
(-- 0.3)0.2 (--)2.0
(0.45)0.56
(1.75)3.3
(0.25)0.4
Unit
V
µs
µs
µs
INPUT
50Ω
IC=10IB1= --10IB2=5A
For PNP, the polarity is reversed.
--16
2SA2062 2SC5774
--14
V
R
R
B
+
100µF 470µF
I
-- V
C
CE
RL=
10Ω
+
VCC=50VVBE= --2V
--500mA
--12
-- A
C
--10
--8
--6
--4
Collector Current, I
--2
0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter V oltage, V
IC -- V
--8
2SA2062
VCE= --5V
--7
BE
CE --
--400mA
--300mA
--200mA
--100mA
--40mA
--20mA
IB=0
IT03410
V
I
-- V
20
18
16
14
-- A
C
12
10
8
6
Collector Current, I
4
2
012345678910
C
Collector-to-Emitter V oltage, V
8
2SC5774
VCE=5V
7
IC -- V
CE
BE
CE --
V
500mA
400mA
300mA
200mA
100mA
40mA
20mA
IB=0
IT03411
--6
-- A
C
--5
--4
--3
--2
Collector Current, I
--1
0
0 --0.5 --1.0 --1.5
Ta=120°C
°C
°C
25
--40
Base-to-Emitter V oltage, VBE -- V
IT03412
6
-- A
C
5
4
3
2
Collector Current, I
1
0
0 0.4 0.8 1.2
C
°
C
°
C
°
25
Ta=120
--40
0.60.2 1.0
Base-to-Emitter V oltage, VBE -- V
IT03413
No.6987-2/4
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