Sanyo 2SC5764 Specifications

Ordering number : ENN6971A

2SC5764

NPN Triple Diffused Planar Silicon Transistor

2SC5764

Switching Regulator Applications

Features

•

High breakdown voltage.

• High reliability.

• High-speed switching.

• Wide ASO.

• Adoption of MBIT process.

Package Dimensions

unit : mm

2041A

[2SC5764]

10.0

3.2

18.1

5.6

1

2.55

1.6

23

2.55

1.2

0.75

3.5

7.2

2.4

16.0

14.0

4.5

2.8

2.4

0.7

1 : Base
2 : Collector
3 : Emitter

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 ° C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

PW≤300µs, Duty cycle≤10% 14 A

Tc=25°C30W

2.55

2.55

SANYO : TO-220ML

700 V
400 V

8V
7A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=400V, IE=0 10 µA
VEB=5V, IC=0 10 µA

Unit

Continued on next page.

D0301 TS IM TA-3502 / 92001 TS IM TA-3235

No.6971-1/4

2SC5764

Continued from preceding page.

Parameter Symbol Conditions

hFE1VCE=5V, IC=0.8A 20* 50*

DC Current Gain hFE2VCE=5V, IC=4A 10

hFE3VCE=5V, IC=1mA 10
Collectoe-to-Emitter Saturation Voltage VCE(sat) IC=4A, IB=0.8A 0.8 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=4A, IB=0.8A 1.5 V
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 80 pF
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t

* : The 2SC5764 is classified by 0.8A hFE as follows.

Rank M N

h

FE

20 to 40 30 to 50

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VCE=10V, IC=0.8A 17 MHz

T

=1mA, IE=0 700 V
=5mA, RBE=∞ 400 V

=1mA, IC=0 8 V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V

f

min typ max

Ratings

0.5 µs

2.5 µs

0.25 µs

Unit

Switching Time Test Circuit

PW=20µs
D.C.≤1%

INPUT

V

R

50Ω

1000mA

Ta=120

25

--40

IC -- V

h

FE

°C

°C

°C

900mA

10

8

-- A
C

6

4

Collector Current, I

2

0

0

Collector-to-Emitter Voltage, VCE -- V

100

7
5

3

FE

2

10

7
5

DC Current Gain, h

3
2

246810

I

B1

I

B2

R

B

100µF 470µF

CE

800mA

-- I

C

+

700mA

OUTPUT

R

L

+

VCC=200VVBE= --5V

IC -- V

8

600mA

500mA

400mA
300mA

7

6

-- A
C

5

4

200mA

100mA

3

2

Collector Current, I

1

=0

I

B

IT03053 IT03054

VCE=5V

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, VBE -- V

1.0

IC / IB=5

7
5

3

(sat) -- V

2

VCE(sat) -- I

BE

Ta=120

VCE=5V

°C

°C

°C

25

--40

C

CE

0.1
7
5

3
2

Collector-to-Emitter

Saturation V oltage, V

--40

°C

25

Ta=120°C

°C

25

--40

°C

°C

1.0
23 752375

0.01

23 75

0.1

Collector Current, IC -- A

1.0

10

IT03055

0.01
23 752375

0.01

23 75

0.1

1.0

Collector Current, IC -- A

10

IT03056

No.6971-2/4