SANYO 2SC5763 Datasheet

Ordering number : ENN6989A

2SC5763

NPN Triple Diffused Planar Silicon Transistor

2SC5763

Switching Regulator Applications

Features

•

High breakdown voltage.

• High reliability.

• High-speed switching.

• Wide ASO.

• Adoption of MBIT process.

Specifications

Package Dimensions

unit : mm

2010C

[2SC5763]

10.2

3.6

18.0

5.6

2.55

5.1

123

1.2

0.8

2.55

2.7

6.3

15.1

14.0

2.7

4.5

1.3

0.4

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 ° C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

PW≤300µs, Duty cycle≤10% 14 A

Tc=25°C55W

700 V
400 V

8V
7A

1.75 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

* : The hFE1 of the 2SC5763 is classified as follows.

Rank M N
hFE1 20 to 40 30 to 50

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=400V, IE=0 10 µA
VEB=5V, IC=0 10 µA

Unit

Continued on next page.

D0301 TS IM TA-3501 / 71801 TS IM TA-3234

No.6989-1/4

2SC5763

Continued from preceding page.

Parameter Symbol Conditions

hFE1VCE=5V, IC=0.8A 20* 50*

DC Current Gain hFE2VCE=5V, IC=4A 10

hFE3VCE=5V, IC=1mA 10
Collectoe-to-Emitter Saturation Voltage VCE(sat) IC=4A, IB=0.8A 0.8 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=4A, IB=0.8A 1.5 V
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 80 pF
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VCE=10V, IC=0.8A 17 MHz

T

=1mA, IE=0 700 V
=5mA, RBE=∞ 400 V

=1mA, IC=0 8 V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V

f

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

0.5 µs

2.5 µs

0.25 µs

Unit

INPUT

50Ω

10

8

-- A
C

6

4

Collector Current, I

2

0

0

Collector-to-Emitter Voltage, VCE -- V

100

7
5

3

FE

2

10

7
5

DC Current Gain, h

3
2

R

V

R

B

+

100µF 470µF

IC -- V

CE

800mA

900mA

+

VCC=200VVBE= --5V

R

700mA

L

600mA

1000mA

500mA

400mA
300mA

200mA

100mA

=0

I

246810

h

-- I

FE

C

B

IT03053 IT03054

VCE=5V

°C

Ta=120

°C

25

°C

--40

IC -- V

8

7

6

-- A
C

5

4

3

2

Collector Current, I

1

0

0 0.2 0.4 0.6 0.8 1.0 1.2

BE

Ta=120

°C

°C

25

Base-to-Emitter V oltage, VBE -- V

1.0

(sat) -- V

IC / IB=5

7
5

3
2

VCE(sat) -- I

C

CE

0.1
7
5

3
2

Collector-to-Emitter

Saturation V oltage, V

--40

°C

25

°C

Ta=120°C

VCE=5V

°C

--40

1.0
23 752375

0.01

23 75

0.1

Collector Current, IC -- A

1.0

10

IT03055

0.01
23 752375

0.01

23 75

0.1

1.0

Collector Current, IC -- A

10

IT03056

No.6989-2/4