SANYO 2SC5710, 2SA2044 Datasheet
Ordering number : ENN6915
2SA2044 / 2SC5710
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2044 / 2SC5710
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, strobes.
Features
• Adoption of FBET and MBIT processes.
•
Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.
Package Dimensions
unit : mm
2045B
[2SA2044 / 2SC5710]
6.5
unit : mm
2044B
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
6.5
5.0
4
1.5
5.5
0.8
1.6
[2SA2044 / 2SC5710]
1.55.5
7.0
7.5
2.3
0.5
2.3
0.5
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.5
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
3
0.8
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3249
No.6915-1/5
2SA2044 / 2SC5710
Specifications
( ) : 2SA2044
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
Tc=25°C15W
Electrical Characteristics at Ta=25°C
(--30)40 V
(--)30 V
(--)6 V
(--)9 A
(--)12 A
(--)1.2 A
1W
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V , f=1MHz (52)40 pF
Collector-to-Emitter Saturation Voltage VCE(sat)
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2.5A, IB=(--)50mA (--)0.85 (--)1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t
CBO
EBO
FE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VCB=(--)30V , IE=0 (--)0.1 µA
VEB=(--)4V, IC=0 (--)0.1 µA
VCE=(--)2V, IC=(--)500mA 200 560
VCE=(--)10V , IC=(--)500mA (290)320 MHz
T
IC=(--)4A, IB=(--)200mA
IC=(--)2.5A, IB=(--)50mA
=(--)10µA, IE=0 (--30)40 V
=(--)1mA, RBE=∞ (--)30 V
=(--)10µA, IC=0 (--)6 V
See specified test circuit.
See specified test circuit.
See specified test circuit.
f
min typ max
Ratings
(--200)180 (--340)270
(--170)130 (--290)195
30
(190)320
15
Swicthing Time Test Circuit
I
PW=20µs
D.C.≤1%
INPUT
B1
I
B2
R
V
B
R
OUTPUT
R
L
Unit
mV
mV
ns
ns
ns
50Ω
100µF 470µF
IC=20IB1= --20IB2=2.5A
For PNP, the polarity is reversed.
+
+
VCC=12VVBE= --5V
No.6915-2/5
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