SANYO 2SC5709 Datasheet
2SA2043 / 2SC5709
No.6914-1/5
Applications
•
Relay drivers, lamp drivers, motor drivers, strobes.
Features
• Adoption of FBET and MBIT processes.
•
Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6914
2SA2043 / 2SC5709
DC / DC Converter Applications
52101 TS IM TA-3248
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Epitaxial Planar Silicon Transistors
Package Dimensions
unit : mm
2045B
unit : mm
2044B
[2SA2043 / 2SC5709]
[2SA2043 / 2SC5709]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
2.3 2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
2.3
0.5
1.55.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3 2.3
0.6
12
4
3
2SA2043 / 2SC5709
No.6914-2/5
V
R
R
B
VCC=5VVBE= --5V
+
+50Ω
INPUT
OUTPUT
R
L
100µF 470µF
PW=20µs
I
B1
D.C.≤1%
I
B2
IC=20IB1= --20IB2=3A
For PNP, the polarity is reversed.
Specifications
( ) : 2SA2043
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
(--)15 V
Collector-to-Emitter Voltage V
CEO
(--)15 V
Emitter-to-Base Voltage V
EBO
(--)5 V
Collector Current I
C
(--)10 A
Collector Current (Pulse) I
CP
(--)13 A
Base Current I
B
(--)1.2 A
Collector Dissipation P
C
1W
Tc=25°C15W
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
VCB=(--)12V, IE=0 (--)0.1 µA
Emitter Cutoff Current I
EBO
VEB=(--)4V, IC=0 (--)0.1 µA
DC Current Gain h
FE
VCE=(--)2V, IC=(--)500mA 200 560
Gain-Bandwidth Product f
T
VCE=(--)2V, IC=(--)500mA (220)280 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (90)50 pF
Collector-to-Emitter Saturation Voltage VCE(sat)
IC=(--)3A, IB=(--)60mA
(--110)120 (--170)180
mV
IC=(--)4.5A, IB=(--)90mA
(--160)180 (--240)280
mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)3A, IB=(--)60mA (--)0.85 (--)1.2 V
Collector-to-Base Breakdown Voltage V
(BR)CBOIC
=(--)10µA, IE=0 (--)15 V
Collector-to-Emitter Breakdown Voltage V
(BR)CEOIC
=(--)1mA, RBE=∞ (--)15 V
Emitter-to-Base Breakdown Voltage V
(BR)EBOIE
=(--)10µA, IC=0 (--)5 V
Turn-On Time t
on
See specified test circuit.
30
ns
Storage Time t
stg
See specified test circuit.
(120)180
ns
Fall Time t
f
See specified test circuit.
(14)25
ns
Swicthing Time Test Circuit
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