Sanyo 2SC5698 Specifications

Ordering number : ENN6664A

2SC5698

NPN Triple Diffused Planar Silicon Transistor

2SC5698

CRT Display Horizontal Deflection

Output Applications

Features

• High speed.

• High breakdown voltage(V

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.

CBO

=1500V).

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 ° C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C65W

Package Dimensions

unit : mm

2174A

[2SC5698]

3.4

16.0

5.0

2.8

0.7

22.0

2.0

20.4

3.5

21.0

5.45

4.0

123

5.45

5.6

3.1

8.0

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PMLH

1500 V

800 V

5V
8A

16 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I
Collector-to-Emitter Saturation Voltage VCE(sat) IC=4.5A, IB=1.13A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=4.5A, IB=1.13A 1.5 V

CBO
CES

CEO

EBO

VCB=800V, IE=0 10 µA
VCE=1500V, RBE=0 1.0 mA

(sus) IC=100mA, IB=0 800 V

VEB=4V, IC=0 40 130 mA

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52101 TS IM TA-3147 / 82200 TS IM TA-3014

No.6664-1/4

Unit

2SC5698

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Diode Forward Voltage V

Storage Time tstg IC=3A, IB1=0.6A, IB2=--1.2A 3.0 µs
Fall Time t

hFE1VCE=5V, IC=1A 5
hFE2VCE=5V, IC=5A 4 7

IEC=6.5A 2 V

F

IC=3A, IB1=0.6A, IB2=--1.2A 0.2 µs

f

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1
I

B2

OUTPUT

Ratings

Unit

8

7

INPUT

50Ω

1.8A

2.0A

R

V

B

R

+

100µF 470µF

I

-- V

C

CE

+

VCC=200VVBE= --2V

1.6A

1.4A

1.2A

A

6

-­C

5

4

3

2

Collector Current, I

1

0

012345678910

Collector-to-Emitter Voltage, V

5

3

Ta=120°C

2

FE

10

7
5

3

DC Current Gain, h

2

1.0

0.1

25°C

--40°C

23 57

hFE -- I

1.0

Collector Current, I

1.0A

0.8A

0.6A

0.4A

0.2A

0.05A

V

CE --

C

VCE=5V

23 57

A

C --

R

L

66.7Ω

IB=0

IT02567

IT02569

9

8

7

A

--

6

C

5

4

3

Collector Current, I

2

1
0

0 0.2 0.4 0.6 0.8 1.0 1.41.2

IC -- V

Base-to-Emitter V oltage, VBE -- V

5
3

2

1.0

(sat) -- V

7

CE

5
3

2

Ta= --40°C

0.1

25°C

7

Collector-to-Emitter

Saturation V oltage, V

5

10

3

VCE(sat) -- I

Collector Current, I

Ta=120°C

120°C

1.00.1

25°C

BE

--40°C

C

23 5723 57

C --

A

VCE=5V

IT02568

IC / IB=5

10

IT02570

No.6664-2/4