Sanyo 2SC5696 Specifications

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6663B

2SC5696

NPN Triple Diffused Planar Silicon Transistor

2SC5696

Color TV Horizontal Deflection

Output Applications

Features

•

High speed.

• High breakdown voltage(V

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.

CBO

=1600V).

Package Dimensions

unit : mm

2174A

[2SC5696]

3.4

16.0

5.0

21.0

4.0

2.8

2.0

0.7

123

5.45

3.5

8.0

22.0

20.4

5.6

3.1

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

Specifications

5.45

SANYO : TO-3PMLH

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C85W

1600 V

800 V

5V
12 A
36 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I

CBO
CES

CEO

EBO

VCB=800V, IE=0 10 µA
VCE=1600V , RBE=0 1.0 mA

(sus) IC=100mA, IB=0 800 V

VEB=4V, IC=0 80 800 mA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

42501 TS IM TA-3261 / 82200 TS IM TA-2994

Ratings

min typ max

Continued on next page.

Unit

No.6663-1/4

2SC5696

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage VCE(sat) IC=7.2A, IB=1.8A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=7.2A, IB=1.8A 1.5 V

DC Current Gain
Fall Time t

Storage Time tstg IC=6A, IB1=1.2A, IB2=--2.4A 2.0 µs
Diode Forward Voltage V

hFE1VCE=5V, IC=1A 3 11
hFE2VCE=5V, IC=8A 4 7

IC=6A, IB1=1.2A, IB2=--2.4A 0.3 µs

f

IEC=10A 2.2 V

F

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

Unit

INPUT

50Ω

10

9

8

A

--

7

C

6

5

4

3

Collector Current, I

2

1
0

012345678910

Collector-to-Emitter Voltage, V

100

7
5

R

V

2.0A

B

R

+

100µF 470µF

I

C

1.8A

hFE -- I

-- V

CE

1.6A

1.4A

C

1.2A

+

VCC=200VVBE= --2V

1.0A

CE --

0.8A

0.6A

V

VCE=5V

R

L

33.3Ω

12

VCE=5V

10

A

--

8

C

6

IC -- V

0.4A

4

0.2A

IB=0

IT02492 IT02493

Collector Current, I

2

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, VBE -- V

10

7
5

IC / IB=5

VCE(sat) -- I

BE

Ta=120°C

C

25°C

--40°C

3

FE

2

10

7
5

DC Current Gain, h

3
2

1.0

0.1

Ta=120°C

23 57

25°C

--40°C

1.0

Collector Current, I

23 57

A

C --

3

(sat) -- V

2

CE

1.0
7
5

3
2

Collector-to-Emitter

Saturation V oltage, V

120°C

2

10

IT02494 IT02495

0.1

57

25°C

1.0

Collector Current, I

Ta= --40°C

23 57

A

C --

No.6663-2/4

10