Sanyo 2SC5696 Specifications

Ordering number : ENN6663B

2SC5696

NPN Triple Diffused Planar Silicon Transistor

2SC5696

Color TV Horizontal Deflection

Output Applications

Features		Package Dimensions
•	High speed.	unit : mm
•	High breakdown voltage(VCBO=1600V).	2174A

•

High reliability(Adoption of HVP process).

[2SC5696]

•

Adoption of MBIT process.

3.4

5.6

•

On-chip damper diode.

16.0

3.1

5.0

8.0

21.0

4.0

22.0

0.8

2.8

2.0

2.1

0.7

20.4

0.9

1

2

3

5.45

3.5

1 : Base

2 : Collector

3 : Emitter

Specifications

5.45

SANYO : TO-3PMLH

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1600

V

Collector-to-Emitter Voltage

VCEO

800

V

Emitter-to-Base Voltage

VEBO

5

V

Collector Current

IC

12

A

Collector Current (Pulse)

ICP

36

A

Collector Dissipation

PC

3.0

W

Tc=25°C

85

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=800V, IE=0

10

μA

Collector Cutoff Current

ICES

VCE=1600V, RBE=0

1.0

mA

Collector Sustain Voltage

VCEO(sus)

IC=100mA, IB=0

800

V

Emitter Cutoff Current

I

EBO

V

=4V, I

=0

80

800

mA

EB

C

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

42501 TS IM TA-3261 / 82200 TS IM TA-2994 No.6663-1/4

2SC5696

Continued from preceding page.

Parameter	Symbol	Conditions				Ratings		Unit
				min		typ	max
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=7.2A, IB=1.8A					3	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=7.2A, IB=1.8A					1.5	V
DC Current Gain	hFE1	VCE=5V, IC=1A			3		11
	hFE2	VCE=5V, IC=8A			4		7
Fall Time	tf	IC=6A, IB1=1.2A, IB2=--2.4A					0.3	ms
Storage Time	tstg	IC=6A, IB1=1.2A, IB2=--2.4A					2.0	ms
Diode Forward Voltage	VF	IEC=10A					2.2	V

Switching Time Test Circuit

		PW=20µs						IB1
															OUTPUT
		D.C.≤ 1%						IB2
		INPUT		VR				RB							RL
															33.3Ω
			50Ω										+
								+
								100µF					470µF
				VBE= --2V									VCC=200V
	10						IC -- VCE											12			IC -- VBE
				2.0A															VCE=5V
	9							1.8A
									1.6A
																		10
	8										1.4A
A																	A
												1.2A
--																	--
	7												1.0A					8
C																	C
I	6														8A		I
Current,														0.			Current,								C
	5														0.6A			6					Ta=120	°			C	C
																											°
																												°
																											25
	4														0.4A													40
Collector																	Collector	4										--
	3
	2														0.2A
																		2
	1														IB=0
	0																	0
	0	1	2		3			4	5		6		7	8	9	10		0	0.2	0.4	0.6			0.8				1.0		1.2
		Collector-to-Emitter Voltage, VCE												--	V IT02492					Base-to-Emitter Voltage, VBE								-- V	IT02493
	100							hFE	--	IC								10		VCE(sat)		--	IC
															VCE=5V				IC / IB=5
	7																	7
	5																V	5
	3																--	3
FE																	(sat)									°	C
h	2																	2							40
DC Current Gain,																	CE							--
																							Ta=
	10															Collector-to-Emitter	Saturation Voltage, V	1.0
				C
	7			°														7
				C
	5	Ta=120°																5
				25		C
					°
				40
	3			--														3
	2																	2	120°C	25°C
	1.0																	0.1
	0.1	2	3		5		7	1.0		2	3		5	7	10	2		5	7	1.0	2	3						5	7	10
				Collector Current,							IC	--	A		IT02494					Collector Current,			IC		--		A		IT02495
																												No.6663-2/4