Sanyo 2SC5690 Specifications
Ordering number : ENN6896A
2SC5690
NPN Triple Diffused Planar Silicon Transistor
2SC5690
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
•
High speed.
• High breakdown voltage(V
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.
CBO
=1500V).
Specifications
Absolute Maximum Ratings at T a=25°C
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 ° C
Storage T emperature T stg --55 to +150 °C
Parameter Symbol Conditions Ratings Unit
CBO
CEO
EBO
C
CP
C
Tc=25°C85W
Package Dimensions
unit : mm
2174A
[2SC5690]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
5.45
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
1500 V
800 V
5V
15 A
35 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
I
Collector Cutoff Current
Collector Sustain Voltage V
Emitter Cutoff Current I
Collector-to-Emitter Saturation Voltage VCE(sat) IC=10.8A, IB=2.7A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=10.8A, IB=2.7A 1.5 V
DC Current Gain
CBO
I
CES
CEO
EBO
hFE1VCE=5V, IC=1A 10
hFE2VCE=5V, IC=12A 4 7
VCB=800V, IE=0 10 µA
VCE=1500V , RBE=0 1.0 mA
(sus) IC=100mA, IB=0 800 V
VEB=4V, IC=0 40 130 mA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3147 / 13001 TS IM TA-3087
No.6896-1/4
Unit
Continued from preceding page.
Parameter Symbol Conditions
Diode Forward Voltage V
Storage Time t
Fall Time t
Switching Time Test Circuit
stg
2SC5690
Ratings
min typ max
IEC=12A 2 V
F
IC=7A, IB1=1.4A, IB2=--2.8A 3.0 µs
IC=7A, IB1=1.4A, IB2=--2.8A 0.2 µs
f
Unit
INPUT
-- A
C
PW=20µs
D.C.≤1%
50Ω
12
10
8
6
4
I
B1
I
B2
R
B
V
R
++
470µF100µF
VCC=200VVBE= --2V
IC -- V
CE
2.0A
Collector Current, I
2
0
01 3 5 7 9
2468
Collector-to-Emitter Voltage, VCE -- V
3
2
FE
DC Current Gain, h
1.0
Ta=120°C
10
7
5
3
2
0.1 101.0
25
--40
hFE -- I
C
°
C
°
C
23 5723 57 23
Collector Current, IC -- A
OUTPUT
RL=28.6Ω
12
IC -- VBE(ON)
1.8A
1.6A
1.4A
1.2A
1.0A
10
-- A
8
C
0.8A
0.6A
0.4A
0.2A
IB=0
10
IT02890
VCE=5V
IT02892 IT02893
6
4
Collector Current, I
2
0
100
7
5
3
2
10
7
5
(sat) -- V
3
CE
2
1.0
7
5
3
2
0.1
7
5
Collector-to-Emitter
Saturation V oltage, V
3
2
0.01
0.1
C
°
C
C
°
25
°
--40
Ta=120
0.20 0.4 0.6 0.8 1.0 1.41.2
Base-to-Emitter V oltage, VBE -- V
VCE(sat) -- I
C
Ta= --40°C
120
°
C
25°C
23 57 23 2357
1.0 10
Collector Current, IC -- A
VCE=5V
IT02891
IC / IB=5
No.6896-2/4
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