Sanyo 2SC5689 Specifications

Ordering number : ENN6654A

2SC5689

NPN Triple Diffused Planar Silicon Transistor

2SC5689

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

•

High speed.

• High breakdown voltage(V

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.

CBO

=1500V).

Specifications

Package Dimensions

unit : mm

2174A

[2SC5689]

3.4

16.0

5.0

2.8

0.7

22.0

2.0

20.4

3.5

21.0

5.45

4.0

123

5.45

5.6

3.1

8.0

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PMLH

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 ° C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C80W

1500 V

800 V

5V
10 A
25 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I

CBO
CES

CEO

EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VCE=1500V , RBE=0 1.0 mA

(sus) IC=100mA, IB=0 800 V

VEB=4V, IC=0 40 130 mA

Continued on next page.

52101 TS IM TA-3147 / 82200 TS IM TA-3038

No.6654-1/4

Unit

2SC5689

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage VBE(sat) IC=7.2A, IB=1.8A 1.5 V
Diode Forward Voltage V
Storage Time t
Fall Time t

hFE1VCE=5V, IC=1A 15
hFE2VCE=5V, IC=8A 4 7

VCE(sat) IC=7.2A, IB=1.8A 3 V

IEC=8A 2.0 V

F

stg

IC=5A, IB1=1A, IB2=--2A 3.0 µs
IC=5A, IB1=1A, IB2=--2A 0.1 0.2 µs

f

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

min typ max

Unit

INPUT

50Ω

10

9

8

A

--

7

C

6

5

4

3

Collector Current, I

2

1
0

12 5634 78910

0

Collector-to-Emitter Voltage, V

100

7
5

3

FE

2

Ta=120°C

R

V

R

I

C -- VCE

h

FE -- IC

B

1.8A

+

VCC=200VVBE= --2V

1.6A

+

100µF 470µF

2.0A

1.4A

1.2A

1.0A

0.8A

0.6A

0.4A

0.2A

IB=0

CE --

25°C

10

7
5

DC Current Gain, h

3
2

1.0

0.1 1.0 10

--40°C

23 57 23 57

Collector Current, I

C --

A

RL=40Ω

IT02418

V

VCE=5V

IT02420

12

10

A

--

8

C

6

4

Collector Current, I

2

0

0

100

7
5

3
2

10

7
5

(sat) -- V

3

CE

2

1.0
7
5

3
2

Ta= --40

0.1
7
5

Collector-to-Emitter

Saturation V oltage, V

3
2

0.01

0.1

I

C -- VBE

VCE=5V

25°C

Ta=120°C

0.2 0.4 0.6 0.8 1.0 1.2

--40°C

Base-to-Emitter V oltage, VBE -- V

VCE(sat) -- I

C

IC / IB=5

25°C

°C

120°C

23 57 23 57

Collector Current, I

1.0 10

C --

A

No.6654-2/4

IT02419

IT02421

2SC5689

10

7
5

3
2

1.0
7

5

3

Switching Time, SW Time -- µs

2

SW Time -- I

t

stg

t

f

C

VCC=200V
IC / IB1=5
IB2 / IB1=2
R load

10

7
5

3
2

1.0
7

5

3

Switching Time, SW Time -- µs

2

SW Time -- I

t

stg

t

f

B2

VCC=200V
IC=5A
IB1=1A
R load

0.1

0.1

100

7
5

3
2

10

7

-- A

5

C

3
2

1.0
7
5

3
2

0.1

Collector Current, I

7
5

3
2

0.01

1.0

23 57 23 57

ICP=25A
IC=10A

Tc=25°C
Single pulse

23 571023 57 23 57

Collector-to-Emitter Voltage, VCE -- V

3.5

3.0

-- W

2.5

C

2.0

Collector Current, IC -- A

1.0

Forward Bias A S O

P

C

=80W

DC operation

P

C --

No heat sink

Ta

10ms

1ms

100

0.1

10

IT02422

100µs

300µs

1000

IT02424 IT02425

0.1

100

7
5

3
2

-- A

10

C

7
5

3
2

1.0
7
5

Collector Current, I

3
2

0.1
100 1000

90

80

70

-- W
C

60

50

23 57 23 57

1.0

Base Current, IB2 -- A

Reverse Bias A S O

23 57 2

Collector-to-Emitter Voltage, VCE -- V

P

C --

Tc

10

IT02423

L=500µH
IB2= --3A
Tc=25°C
Single pulse

1.5

1.0

Collector Dissipation, P

0.5

0

0

Ambient Temperature, Ta -- °C

40

30

20

Collector Dissipation, P

10

0

604020

80

160120 140100

IT02389

0

4020

100 12060 80

Case Temperature, Tc -- °C

140

160

IT02426

No.6654-3/4

2SC5689

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.

No.6654-4/4

PS