
Ordering number : ENN6653A
2SC5683
NPN Triple Diffused Planar Silicon Transistor
2SC5683
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
•
High speed.
• High breakdown voltage(V
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
CBO
=1500V).
Specifications
Package Dimensions
unit : mm
2174A
[2SC5683]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
5.45
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 ° C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C 100 W
1500 V
800 V
5V
25 A
50 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I
CBO
CES
CEO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=800V, IE=0 10 µA
VCE=1500V, RBE=0 1.0 mA
(sus) IC=100mA, IB=0 800 V
VEB=4V, IC=0 1.0 mA
Continued on next page.
42501 TS IM TA-3147 / 80100 TS IM TA-2892
No.6653-1/4
Unit

2SC5683
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain
Collector-to-Emitter Saturation Voltage VCE(sat) IC=18A, IB=4.5A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=18A, IB=4.5A 1.5 V
Storage Time t
Fall Time t
hFE1VCE=5V, IC=1A 15
hFE2VCE=5V, IC=20A 4 7
stg
IC=12A, IB1=2.4A, IB2=--4.8A 3.0 µs
IC=12A, IB1=2.4A, IB2=--4.8A 0.2 µs
f
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
B1
I
B2
OUTPUT
Ratings
min typ max
Unit
INPUT
50Ω
40
35
A
30
-C
25
20
15
10
Collector Current, I
5
0
12 5634 78910
0
V
R
I
C -- VCE
R
B
+
100µF 470µF
9.0A
10.0A
Collector-to-Emitter Voltage, V
h
100
7
5
Ta=120°C
3
FE
2
10
7
5
DC Current Gain, h
3
2
1.0
0.1 1.0 10
25°C
--40°C
23 57 23 2357
FE -- IC
Collector Current, I
C --
RL=16.7Ω
+
VCC=200VVBE= --2V
7.0A
8.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0.5A
IB=0
IT02409
V
CE --
VCE=5V IC / IB=5
A
IT02411
12
10
A
--
8
C
6
4
Collector Current, I
2
0
2
10
7
5
3
(sat) -- V
2
CE
1.0
7
5
3
2
0.1
Collector-to-Emitter
Saturation V oltage, V
7
5
3
0.1
0.2 0.4 0.6 0.8 1.0 1.2
0
Ta= --40°C
120°C
23 57 23 57
I
C -- VBE
25°C
Ta=120°C
--40°C
Base-to-Emitter V oltage, VBE -- V
VCE(sat) -- I
C
25°C
1.0 10
Collector Current, I
C --
A
VCE=5V
IT02410
32
IT02412
No.6653-2/4

2SC5683
10
7
5
3
2
SW Time -- I
t
stg
C
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
10
7
5
3
2
SW Time -- I
t
stg
t
f
B2
VCC=200V
IC=12A
IB1=2.4A
R load
1.0
7
5
3
Switching Time, SW Time -- µs
2
0.1
100
10
-- A
C
1.0
0.1
Collector Current, I
0.01
23 57 23 57
0.1
ICP=50A
7
5
IC=25A
3
2
7
5
3
2
7
5
3
2
7
5
3
Tc=25°C
2
Single pulse
23 571023 57 23 57
1.0
Collector-to-Emitter Voltage, VCE -- V
3.5
t
f
1.0
Collector Current, IC -- A
Forward Bias A S O
P
C
=100W
P
C --
10ms
DC operation
100
Ta
1ms
1.0
7
5
3
Switching Time, SW Time -- µs
2
10
32
IT02413
300µs
1000
IT02415 IT02416
0.1
0.1
23 57 23 57
1.0
Base Current, IB2 -- A
100
7
5
3
2
-- A
10
C
7
5
3
2
1.0
7
5
Collector Current, I
3
2
0.1
100 1000
Reverse Bias A S O
23 57 2
Collector-to-Emitter Voltage, VCE -- V
120
P
C --
Tc
10
IT02414
L=500µH
IB2= --5A
Tc=25°C
Single pulse
3.0
-- W
2.5
C
2.0
1.5
1.0
Collector Dissipation, P
0.5
0
0
Ambient Temperature, Ta -- °C
No heat sink
604020
80
IT02389
100
-- W
C
80
60
40
Collector Dissipation, P
20
0
160120 140100
0
4020
100 12060 80
Case Temperature, Tc -- °C
140
160
IT02417
No.6653-3/4

2SC5683
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2001. Specifications and information herein are subject
to change without notice.
No.6653-4/4
PS