
Ordering number : ENN6608A
2SC5682
NPN Triple Diffused Planar Silicon Transistor
2SC5682
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
•
High speed.
• High breakdown voltage(V
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
CBO
=1500V).
Specifications
Package Dimensions
unit : mm
2174A
[2SC5682]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
5.45
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 ° C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C95W
1500 V
800 V
5V
20 A
40 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I
CBO
CES
CEO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=800V, IE=0 10 µA
VCE=1500V , RBE=0 1.0 mA
(sus) IC=100mA, IB=0 800 V
VEB=4V, IC=0 1.0 mA
Unit
Continued on next page.
42501 TS IM TA-3147 / 71400 TS IM TA-2891
No.6608-1/4

2SC5682
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain
Collector-to-Emitter Saturation Voltage VCE(sat) IC=14.4A, IB=3.6A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=14.4A, IB=3.6A 1.5 V
Storage Time t
Fall Time t
hFE1VCE=5V, IC=1A 15
hFE2VCE=5V, IC=16A 4 7
stg
IC=10A, IB1=2A, IB2=--4A 3.0 µs
IC=10A, IB1=2A, IB2=--4A 0.2 µs
f
min typ max
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
B1
I
B2
OUTPUT
Ratings
Unit
INPUT
20
5.0A
18
16
A
--
14
C
12
10
8
6
Collector Current, I
4
2
0
12 5634 78910
0
50Ω
4.5A
V
R
I
C -- VCE
R
B
+
100µF 470µF
Collector-to-Emitter Voltage, V
h
100
7
5
Ta=120°C
3
FE
2
10
7
5
DC Current Gain, h
3
2
1.0
0.1 1.0 10
25°C
--40°C
23 57 23 2357
FE -- IC
Collector Current, I
C --
4.0A
3.5A
3.0A
2.5A
2.0A
1.5A
1.0A
0.5A
IB=0
CE --
A
+
VCC=200VVBE= --2V
RL=20Ω
IT02400
V
VCE=5V
IT02402
12
10
A
--
8
C
6
4
Collector Current, I
2
0
0
10
IC / IB=5
7
5
3
2
(sat) -- V
1.0
CE
7
5
3
2
Ta= --40°C
0.1
Collector-to-Emitter
Saturation V oltage, V
7
120°C
5
3
0.1
I
C -- VBE
VCE=5V
25°C
Ta=120°C
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter V oltage, VBE -- V
VCE(sat) -- I
--40°C
IT02401
C
25°C
23 57 23 57
1.0 10
Collector Current, I
C --
A
IT02403
No.6608-2/4
32

1.0
2SC5682
10
7
5
3
2
7
5
SW Time -- I
t
stg
C
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
10
7
5
3
2
1.0
7
5
SW Time -- I
t
stg
t
f
B2
VCC=200V
IC=10A
IB1=2A
R load
3
Switching Time, SW Time -- µs
2
0.1
100
10
-- A
C
1.0
0.1
Collector Current, I
0.01
23 57 23 57
0.1
7
ICP=40A
5
3
IC=20A
2
7
5
3
2
7
5
3
2
7
5
3
Tc=25°C
2
Single pulse
23 571023 57 23 57
1.0
Collector-to-Emitter Voltage, VCE -- V
3.5
3.0
-- W
2.5
C
2.0
1.5
1.0
Collector Dissipation, P
0.5
0
0
Ambient Temperature, Ta -- °C
t
f
1.0
Collector Current, IC -- A
Forward Bias A S O
P
C
=95W
P
No heat sink
604020
C --
80
10ms
DC operation
100
Ta
1ms
3
Switching Time, SW Time -- µs
2
10
32
IT02404
100µs
300µs
1000
IT02406 IT02407
160120 140100
IT02389
0.1
23 57 23 57
0.1
1.0
Base Current, IB2 -- A
100
7
5
3
2
-- A
10
C
7
5
3
2
1.0
7
5
Collector Current, I
3
2
0.1
100 1000
Reverse Bias A S O
23 57 2
Collector-to-Emitter Voltage, VCE -- V
100
95
90
80
-- W
70
C
60
50
40
30
20
Collector Dissipation, P
10
0
0
4020
P
C --
Tc
Case Temperature, Tc -- °C
100 12060 80
IT02405
L=100µH
IB2= --5A
Tc=25°C
Single pulse
140
IT02408
10
160
No.6608-3/4

2SC5682
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2001. Specifications and information herein are subject
to change without notice.
PS
No.6608-4/4