Sanyo 2SC5682 Specifications

Ordering number : ENN6608A
2SC5682
NPN Triple Diffused Planar Silicon Transistor
2SC5682
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
High speed.
High breakdown voltage(V
Adoption of MBIT process.
CBO
=1500V).
Specifications
Package Dimensions
unit : mm
2174A
[2SC5682]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
5.45
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PMLH
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I
Collector Dissipation P Junction T emperature Tj 150 ° C
Storage T emperature T stg --55 to +150 °C
CBO CEO EBO
C
CP
C
Tc=25°C95W
1500 V
800 V
5V 20 A 40 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I Collector Cutoff Current I Collector Sustain Voltage V Emitter Cutoff Current I
CBO CES
CEO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max VCB=800V, IE=0 10 µA VCE=1500V , RBE=0 1.0 mA
(sus) IC=100mA, IB=0 800 V
VEB=4V, IC=0 1.0 mA
Unit
Continued on next page.
42501 TS IM TA-3147 / 71400 TS IM TA-2891
No.6608-1/4
2SC5682
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain Collector-to-Emitter Saturation Voltage VCE(sat) IC=14.4A, IB=3.6A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=14.4A, IB=3.6A 1.5 V Storage Time t Fall Time t
hFE1VCE=5V, IC=1A 15 hFE2VCE=5V, IC=16A 4 7
stg
IC=10A, IB1=2A, IB2=--4A 3.0 µs IC=10A, IB1=2A, IB2=--4A 0.2 µs
f
min typ max
Switching Time Test Circuit
I
PW=20µs D.C.1%
B1
I
B2
OUTPUT
Ratings
Unit
INPUT
20
5.0A
18
16
A
--
14
C
12
10
8
6
Collector Current, I
4
2 0
12 5634 78910
0
50
4.5A
V
R
I
C -- VCE
R
B
+
100µF 470µF
Collector-to-Emitter Voltage, V
h
100
7 5
Ta=120°C
3
FE
2
10
7 5
DC Current Gain, h
3 2
1.0
0.1 1.0 10
25°C
--40°C
23 57 23 2357
FE -- IC
Collector Current, I
C --
4.0A
3.5A
3.0A
2.5A
2.0A
1.5A
1.0A
0.5A
IB=0
CE --
A
+
VCC=200VVBE= --2V
RL=20
IT02400
V
VCE=5V
IT02402
12
10
A
--
8
C
6
4
Collector Current, I
2
0
0
10
IC / IB=5
7 5
3 2
(sat) -- V
1.0
CE
7 5
3 2
Ta= --40°C
0.1
Collector-to-Emitter
Saturation V oltage, V
7
120°C
5 3
0.1
I
C -- VBE
VCE=5V
25°C
Ta=120°C
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter V oltage, VBE -- V
VCE(sat) -- I
--40°C
IT02401
C
25°C
23 57 23 57
1.0 10
Collector Current, I
C --
A
IT02403
No.6608-2/4
32
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