SANYO 2SC5646 Datasheet

Ordering number : ENN6606

2SC5646

NPN Epitaxial Planar Silicon Transistor

2SC5646

UHF to S Band Low-Noise Amplifier

and OSC Applications

Features

•

Low-noise use : NF=1.5dB typ (f=2GHz).

• High cut-off frequency: f

• Low operating voltage.

• High gain :S21e

• Ultraminiature and thin flat leadless package

2

=10GHz typ (VCE=1V).

T

: fT=12.5GHz typ (VCE=3V).

=9.5dB typ (f=2GHz).

Package Dimensions

unit : mm

2159

[2SC5646]

1.4

0.25

0.3

0.1

(1.4mm✕0.8mm✕0.6mm).

0.8

1.4

132

0.45

0.2

0.3

1 : Base
2 : Emitter
3 : Collector

Specifications

0.6

SANYO : SSFP

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage Temperature T stg --55 to +150 °C

CBO
CEO
EBO

C

C

9V
4V
2V

30 mA

100 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain-Bandwidth Product
Output Capacitance Cob VCB=1V, f=1MHz 0.55 0.7 pF

Reverse Transfer Capacitance Cre VCB=1V, f=1MHz 0.4 pF
Forward Transfer Gain
Noise Figure NF VCE=1V, IC=3mA, f=2GHz 1.5 2.3 dB

CBO
EBO

FE

fT1VCE=1V, IC=5mA 8 10 GHz
fT2VCE=3V, IC=15mA 12.5 GHz

S21e



S21e



VCB=5V, IE=0 1.0 µA
VEB=1V, IC=0 10 µA
VCE=1V, IC=5mA 100 160

2

1VCE=1V, IC=5mA, f=2GHz 8 9.5 dB



2

2VCE=3V, IC=15mA, f=2GHz 10.5 dB



min typ max

Marking : NF

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72100 TS IM T A-2972

No.6606-1/6

Unit

2SC5646

I

10

C -- VCE

30

0.05mA

I

C -- VBE

8

-- mA
C

6

4

Collector Current, I

2

0

0

Collector-to-Emitter Voltage, VCE -- V

1000

7
5

3

FE

2

100

7
5

DC Current Gain, h

3
2

10

357

1.0

7

1

h

FE -- IC

V

=3V

CE

1V

3

1.0

2

7

5

Collector Current, IC -- mA

Cob -- V

CB

0.04mA

0.03mA

0.02mA

0.01mA

IB=0

32

10 100

4

IT02260

3

5

IT02262

7

2

f=1MHz

20

-- mA
C

10

=3V

CE

V

1V

Collector Current, I

0

0

5

100

7
5

3

-- GHz
T

2

10

7
5

3
2

Gain-Bandwidth Product, f

1.0

1.0

1.0

7

0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, VBE -- V

fT -- I

C

=3V

V

CE

IT02261

1V

23 57

Collector Current, IC -- mA

Cre -- V

23 57

10

CB

100

IT02253

f=1MHz

-- dB

2

Output Capacitance, Cob -- pF

Forward Transfer Gain, S21e

0.1

5

3

2

5

3

2

Reverse Transfer Capacitance, Cre -- pF

2

-- dB

Forward Transfer Gain, S21e

0.1

0.1

2 3 57 2 3 57

Collector-to-Base Voltage, V

18

1.0

S21e2 -- I

CB --

C

10

IT02263

V

f=2GHz

16

14

12

10

8

6

4

2

0

1.0

23 5

V

CE

7

=3V

1V

10

23 5

7

100

Collector Current, IC -- mA

0.1

2

5

3

7

1.0

Collector-to-Base Voltage, V

18

16

14

12

10

8

6

4

2

0

1.0

2

S21e2 -- I

=3V

V

CE

1V

3

7

5

2

CB --

C

2

10

Collector Current, IC -- mA

5

3

7

10

IT02254

V

f=1GHz

3

7

5

100

IT02256 IT02257

No.6606-2/6