SANYO 2SC5645 Datasheet

Ordering number : ENN6588

2SC5645

NPN Epitaxial Planar Silicon Transistor

2SC5645

UHF to S Band Low-Noise Amplifier

and OSC Applications

Features

•

Low noise : NF=1.5dB typ (f=2GHz).

• High cutoff frequency : f
: f

• Low-voltage operating .

• High gain :S21e

2

=9.5dB typ (f=2GHz).

=10GHz typ (VCE=1V).

T

=12.5GHz typ (VCE=3V).

T

Package Dimensions

unit : mm

2106A

[2SC5645]

0.75

0.4

0.8

0.4

0.6

1.6

0.1

0.2

0.3

1

3

2

0.5 0.5

1.6

0 to 0.1

0.1max

1 : Base
2 : Emitter
3 : Collector

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

C

SANYO : SMCP

9V
4V
2V

30 mA

100 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain-Bandwidth Product
Output Capacitance Cob VCE=1V, f=1MHz 0.55 0.7 pF

Reverse Transfer Capacitance Cre VCE=1V, f=1MHz 0.4 pF
Forward Transfer Gain
Noise Figure NF VCE=1V, IC=3mA, f=2GHz 1.5 2.3 dB

CBO
EBO

FE

fT1VCE=1V, IC=5mA 8 10 GHz
fT2VCE=3V, IC=15mA 12.5 GHz

S21e



S21e



VCB=5V, IE=0 1.0 µA
VEB=1V, IC=0 10 µA
VCE=1V, IC=5mA 100 160

2

1VCE=1V, IC=5mA, f=2GHz 8 9.5 dB



2

2VCE=3V, IC=15mA, f=2GHz 10.5 dB



min typ max

Marking : NF

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

90100 TS IM TA-3001

No.6588-1/6

2SC5645

I

10

C -- VCE

30

0.05mA

I

C -- VBE

8

-- mA
C

6

4

Collector Current, I

2

0

0

1

Collector-to-Emitter Voltage, VCE -- V

1000

7
5

3

FE

2

100

7
5

DC Current Gain, h

3
2

10

357 357

1.0

2

Collector Current, IC -- mA

1.0

7

Cob -- V

h

FE -- IC

V

=3V

CE

1V

0.04mA

0.03mA

0.02mA

0.01mA

IB=0

32

10 100

4

357

2

IT02250

IT02252

CB

f=1MHz

20

-- mA
C

10

=3V

CE

V

1V

Collector Current, I

5

0

100

7
5

3

-- GHz
T

2

10

7
5

3
2

Gain-Bandwidth Product, f

1.0

1.0

1.0

7

0.2 0.4 0.6 0.8 1.0 1.2

0

Base-to-Emitter V oltage, VBE -- V

fT -- I

C

=3V

V

CE

1V

23 57

10

23 57

Collector Current, IC -- mA

Cre -- V

CB

IT02251

100

IT02253

f=1MHz

2

Output Capacitance, Cob -- pF

-- dB

Forward Transfer Gain, S21e

0.1

5

3

2

5

3

2

Reverse Transfer Capacitance, Cre -- pF

2

-- dB

Forward Transfer Gain, S21e

0.1

0.1

2 3 57 2 3 57

Collector-to-Base Voltage, V

18

1.0

S21e2 -- I

CB --

C

10

IT02255

V

f=2GHz

16

14

12

10

8

6

4

2

0

1.0

23 5

=3V

V

CE

1V

7

10

23 5

7

100

Collector Current, IC -- mA

0.1

2

5

3

7

1.0

Collector-to-Base Voltage, V

18

16

14

12

10

8

6

4

2

0

1.0

2

S21e2 -- I

=3V

V

CE

1V

3

7

5

2

CB --

C

2

10

Collector Current, IC -- mA

5

3

7

10

IT02254

V

f=1GHz

3

7

5

100

IT02256 IT02257

No.6588-2/6