SANYO 2 SC 5639 Service Manual
www.DataSheet4U.com
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:ENN6467
2SC5639
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
5.0
5.6
Features
· High speed (tf=100ns typ).
· High breakdown voltage (V
CBO
=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2174
[2SC5639]
3.4
16.0
21.0
4.0
123
5.45
5.45
OBC
OEC
OBE
PC
Tc=25˚C
22.0
2.8
2.0
20.4
0.7
3.5
3.1
0.8
0.8
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
0051V
008V
6V
02A
04A
3W
001W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
egatloVniatsuSrettimE-ot-rotcelloCV
tnerruCffotuCrettimEI
tnerruCffotuCrotcelloC
niaGtnerruCCD
I
I
hEF1VECI,V5=
hEF2VECI,V5=
V
SEC
OBE
OBC
EC
I
)sus(OEC
C
V
BE
V
BC
R,V0051=
0=0.1Am
EB
I,Am001=
0=008V
B
I,V4=
0=0.1Am
C
I,V008=
0=01Aµ
E
A1=
C
A61=
C
71700TS (KOTO) TA-2592 No.6467–1/4
sgnitaR
nimpytxam
0203
47
tinU
Continued on next page.
2SC5639
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
)tas(ICI,A61=
EC
)tas(ICI,A61=
EB
I
gts
C
I
f
C
A4=
B
A4=5.1V
B
I,A21=
I,A21=
I,A4.2=
1B
1B
2B
I,A4.2=
2B
sgnitaR
nimpytxam
A8.4–=
A8.4–=
1.02.0sµ
tinU
5V
0.3sµ
PW=20µs
D.C.≤1%
INPUT
50Ω
20
18
16
–A
14
C
12
10
Collector Current, I
8
6
4
2
0
7
5
4.5A
5.0A
012345678910
Collector-to-Emitter Voltage, VCE–V
Ta=120
3
2
FE
10
7
5
3
DC Current Gain, h
2
1.0
7
7
23 5
0.1 1.0 10
I
B1
I
V
R
100µF 470µF
VBE=--2V
I
hFE -- I
B2
R
C
B
+
-- V
OUTPUT
+
VCC=200V
CE
C
°C
25°C
°C
--40
7
Collector Current, IC–A
23 235
RL=16.7Ω
4.0A
3.0A
2.5A
VCE=5V
7
22
–A
C
Collector Current, I
(sat) – V
CE
20
18
16
14
12
10
8
6
4
2
0
7
5
3
2
1.0
7
5
3
2
0.2 0.4 0.6 1.00.8 1.2 1.4
0
Base-to-Emitter Voltage, VBE–V
IC / IB=5
3.5A
2.0A
1.5A
1.0A
0.5A
IB=0
IT01773 IT01774
Ta=--40
0.1
Collector-to-Emitter
Saturation Voltage, V
7
5
3
IT01775
120°C
23 57 3 322577
IC -- V
VCE(sat) -- I
25°C
°C
Collector Current, IC–A
Ta=120
1.0 100.1
BE
VCE=5V
°C
°C
25°C
--40
C
IT01776
No.6467–2/4
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