2 SC 5639
www.DataSheet4U.com
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:ENN6467
2SC5639
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71700TS (KOTO) TA-2592 No.6467–1/4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2174
[2SC5639]
Features
· High speed (t
f
=100ns typ).
· High breakdown voltage (V
CBO
=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Tc=25˚C
Continued on next page.
16.0
3.4
123
21.0
5.0
22.0
0.8
20.4
4.0
2.0
2.8
2.1
5.45
5.45
0.7
0.9
3.5
0.8
5.6
3.1
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
0051V
egatloVrettimE-ot-rotcelloCV
OEC
008V
egatloVesaB-ot-rettimEV
OBE
6V
tnerruCrotcelloCI
C
02A
)esluP(tnerruCrotcelloCI
PC
04A
noitapissiDrotcelloCP
C
3W
001W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloC
I
SEC
V
EC
R,V0051=
EB
0=0.1Am
egatloVniatsuSrettimE-ot-rotcelloCV
)sus(OEC
I
C
I,Am001=
B
0=008V
tnerruCffotuCrettimEI
OBE
V
BE
I,V4=
C
0=0.1Am
tnerruCffotuCrotcelloC
I
OBC
V
BC
I,V008=
E
0=01Aµ
niaGtnerruCCD
h
EF
1V
EC
I,V5=
C
A1=
0203
h
EF
2V
EC
I,V5=
C
A61=
47
2SC5639
No.6467–2/4
Switching Time Test Circuit
+
+
50Ω
INPUT
OUTPUT
V
R
R
B
R
L
=16.7Ω
V
CC
=200V
100µF 470µF
V
BE
=--2V
PW=20µs
D.C.≤1%
I
B1
I
B2
V
CE
(sat)
-- I
C
h
FE
-- I
C
12
14
8
10
4
6
2
20
16
18
0
1.0
10
7
2
3
5
7
2
3
5
7
5
7
3
2
0.1
1.0
7
3
2
3
5
7
5
14
16
6
8
10
12
4
2
22
18
20
0
012345678910
7
0.1 1.0 10
23 5
7
23 235
7
1.0 100.1
23 57 3 322577
0
0.2 0.4 0.6 1.00.8 1.2 1.4
I
C
-- V
CE
I
C
-- V
BE
IT01773 IT01774
IT01775
IT01776
I
B
=0
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
3.5A
4.0A
4.5A
5.0A
Ta=120
°C
25°C
--40
°C
Ta=120
°C
25°C
--40
°C
Ta=--40
°C
120°C
25°C
V
CE
=5V
V
CE
=5V
I
C
/ I
B
=5
Collector Current, I
C
–A
Collector-to-Emitter Voltage, V
CE
–V
Collector Current, I
C
–A
Base-to-Emitter Voltage, V
BE
–V
DC Current Gain, h
FE
Collector Current, I
C
–A
Collector-to-Emitter
Saturation Voltage, V
CE
(sat) – V
Collector Current, I
C
–A
Continued from preceding page.
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVnoitarutaSrettimE-ot-rotcelloCV
EC
)tas(I
C
I,A61=
B
A4=
5V
egatloVnoitarutaSrettimE-ot-esaBV
EB
)tas(I
C
I,A61=
B
A4=5.1V
emiTegarotSt
gts
I
C
I,A21=
1B
I,A4.2=
2B
A8.4–=
0.3sµ
emiTllaFt
f
I
C
I,A21=
1B
I,A4.2=
2B
A8.4–=
1.02.0sµ
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