Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
60V / 5A High-Speed Switching Applications
Ordering number:ENN6336
2SA2023/2SC5611
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.0
1.0
1.0
8.0
1.6
0.8
0.8
0.75
1.5
7.5
3.0
1.4
11.0
15.5
3.3
3.0
0.7
2.4
4.8
1.7
123
Applications
· Various inductance lamp drivers for electrical
equipment.
· Inverters, converters (strobes, flash, fluorescent lamp
lighting circuit).
· Power amplifier (high-power car stereo, motor
control).
· High-speed switching (switching regulater, driver
circuit).
Features
· Low collector-to-emitter saturation voltage.
· Excellent dependence of hFE on current.
· High-speed switching.
· Micaless package facilitating mounting.
Specifications
Note * ( ) : 2SA2023
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2165
[2SA2023/2SC5611]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO126ML
Note : The emitter and base are reversely assigned to those
of our standard products encapsulated in the TO126ML package.
08)–(V
06)–(V
5)–(V
5)–(A
7)–(A
3.1W
01W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
V
OBC
OBE
EF
T
EC
V
V
V
)tas(ICI,A5.2)–(=
BC
BE
EC
EC
I,V04)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
I,V2)–(=
A1)–(=011002
C
I,V5)–(=
A1)–(=001zHM
C
B
A521.0)–(=4.0)–(V
sgnitaR
nimpytxam
tinU
Continued on next page.
13100TS (KOTO) TA-2336 No.6336–1/4
2SA2023/2SC5611
Continued on preceding page.
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egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,Am1)–(=
0=08)–(V
E
R,Am1)–(=
=∞ 06)–(V
EB
I,Am1)–(=
0=5)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
1.0sµ
5.0
1.0sµ
tinU
sµ
INPUT
--6
--5
–A
--4
C
--3
--2
Collector Current, I
--1
PW=20µs
D.C.≤1%
50Ω
I
B1
I
B2
R
V
B
R
++
100µF
VBE=--5V
20IB1=--20IB2=IC=2A
(For PNP, the polarity is reversed.)
I
-- V
C
470µF
BE
C
°
Ta=120
OUTPUT
VCC=20V
C
C
°
25°
--40
RL=10Ω
2SA2023
VCE=--2V
–A
C
Collector Current, I
I
-- V
6
C
BE
2SC5611
VCE=2V
5
4
3
C
°
2
1
Ta=120
C
C
°
25°
--40
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
1000
7
5
3
FE
2
100
7
5
DC Current Gain, h
3
2
10
--0.01
Base-to-Emitter Voltage, VBE–V
h
-- I
FE
Ta=120°
C
C
25°C
--40°C
325
73257 3257
Collector Current, IC–A
--1.0
IT00512
2SA2023
VCE=--2V
IT00514
0
0 0.2 0.4 0.6 0.8 1.21.0
1000
7
5
3
FE
2
100
7
5
DC Current Gain, h
3
2
10
--10--0.1
0.01
Base-to-Emitter Voltage, VBE–V
h
-- I
FE
Ta=120°
C
C
25°C
--40°C
325
73257 3257
Collector Current, IC–A
1.0
IT00513
2SC5611
VCE=2V
100.1
IT00515
No.6336–2/4