SANYO 2SC5607 Datasheet

Ordering number : ENN6403A

2SC5607

NPN Epitaxial Planar Silicon Transistor

2SC5607

DC / DC Converter Applications

Applications

•

Relay drivers, lamp drivers, motor drivers, strobes.

Features

•

Adoption of MBIT processes.

•

Large current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High-speed switching.

•

High allowable power dissipation.

Specifications

Absolute Maximum Ratings at T a=25°C

Package Dimensions

unit : mm

2033A

[2SC5607]

4.0

0.4

0.5

0.4

1.3

0.7

123

3.0

3.8nom

1.8

0.6

1.3

0.7

2.2

3.0

15.0

0.4

1 : Emitter
2 : Collector
3 : Base

SANYO : SPA

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation PC 0.55 W
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

B

15 V
10 V

7V
5A
9A
1A

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62502 TS IM TA-3603 / 21000 TS (KOTO) TA-2526

No.6403-1/4

2SC5607

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

DC Current Gain
Gain-Bandwidth Product f

Output Capacitance Cob VCB=10V , f=1MHz 23 pF
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=30mA 0.85 1.2 V

Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t

CBO
EBO

hFE1VCE=2V, IC=500mA 600
hFE2VCE=2V, IC=3A 200

T

VCE(sat)1 IC=1.5A, IB=30mA 100 150 mV
VCE(sat)2 IC=3A, IB=60mA 180 270 mV

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VCB=10V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA

VCE=2V, IC=500mA 380 MHz

=10µA, IE=0 15 V
=1mA, RBE=∞ 10 V

=10µA, IC=0 7 V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.

f

min typ max

Switching Time Test Circuit

Ratings

30 ns

210 ns

11 ns

Unit

PW=20µs
D.C.≤1%

INPUT

50Ω

5

40mA

4

-- A
C

3

2

Collecotr Current, I

1

0

0 0.2 0.4 0.6 0.8 1.0

60mA

I

B1

I

B2

R

B

V

R

+

220µF 470µF

VBE= --5V
20IB1= --20IB2= IC=1.5A

I

-- V

C

25mA

20mA

CE

15mA

+

VCC=5V

Collector-to-Emitter Voltage, VCE -- V

6.0

V

=2V

CE

5.5

5.0

4.5

-- A

4.0

C

3.5

3.0

2.5

2.0

1.5

Collector Current, I

1.0

0.5
0

0

0.2 0.4 0.6 0.8 1.0

C

BE

Ta=75°C

°C

25

I

-- V

Base-to-Emitter V oltage, VBE -- V

OUTPUT

R

L

I

-- V

10mA

5mA

4mA

5

15mA

20mA

4

-- A
C

25mA

3

C

10mA

CE

3mA

2mA

1mA

IB=0

IT01588 IT01589

°C

--25

IT01590

2

Collecotr Current, I

1

0

0

Collector-to-Emitter Voltage, VCE -- V

10000

7
5

3
2

FE

1000

7
5

3
2

100

7

DC Current Gain, h

5
3

2

10

23 57 23 57 23 57

12 43

h

-- I

FE

C

Ta=75°C

--25°C

25°C

0.10.01

1.0 10

Collector Current, IC -- A

8mA

6mA

4mA

2mA

1mA

IB=0

5

VCE=2V

IT01591

No.6403-2/4