Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6307A
2SA2013/2SC5566
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of FBET and MBIT processes.
· High current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package facilitates miniaturization in end
products.
· High allowable power dissipation.
Specifications
( ) : 2SA2013
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
Marking : 2SA2013 : AT 2SC5566 : FC
OBC
OEC
OBE
C
PC
B
Mounted on a ceramic board (250mm
C
Tc=25˚C
V
OBC
V
OBE
V
EF
V
T
Package Dimensions
unit:mm
2038A
[2SA2013/2SC5566]
4.5
1.6
0.4
I,V04)–(=
BC
BE
EC
EC
BC
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
I,V2)–(=
C
I,V01)–(=
C
Am005)–(=002065
Am005)–(=
zHM1=f,V01)–(=
3
1.5
0.75
2
×0.8mm)
0.5
2
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
sgnitaR
nimpytxam
)063(zHM
004zHM
51)42(Fp
Continued on next page.
08)05–(V
05)–(V
6)–(V
4)–(A
7)–(A
006)–(Am
3.1W
5.3W
˚C
˚C
tinU
52501TS KT TA-3260 No.6307–1/5
2SA2013/2SC5566
Continued on preceding page.
retemaraPlobmySsnoitidnoC
I
no
gts
f
C
)tas(
I
C
)tas(ICI,A2)–(=
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
EC
EB
Switching Time Test Circuit
I
VR10
B1
I
B2
R
B
+
100µF 470µF
OUTPUT
25Ω
+
PW=20µs
D.C.≤1%
INPUT
50Ω
I,A1)–(=
B
I,A2)–(=
B
B
Am05)–(=
Am001)–(=
Am001)–(=98.0)–(2.1)–(V
I,Aµ01)–(=
0=
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)501–()081–(Vm
58031Vm
)002–()043–(Vm
051522Vm
)05–(V
08V
53)03(sn
)032(
003
02)51(sn
tinU
sn
sn
--4
2SA2013
VBE=--5V
10IB1= --10IB2= IC=1A
(For PNP, the polarity is reversed.)
I
C
--90mA
-- V
--100mA
VCC=25V
CE
--80mA
--3
–A
C
Collector Current, I
--4.0
--3.5
--3.0
–A
C
--2.5
--70mA
--60mA
--2
--1
0
0 --0.4 --0.8 --1.2 --1.6 --2.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
--30mA
25°C
--50mA
--40mA
--20mA
--10mA
IB=0
IT00152
2SA2013
VCE=--2V
–A
C
Collector Current, I
4.0
3.5
3.0
–A
C
2.5
4
90mA
80mA
3
2
1
2SC5566
0
0
I
-- V
70mA
C
60mA
CE
100mA
0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
50mA
40mA
30mA
20mA
10mA
IB=0
IT00153
2SC5566
VCE=2V
25°C
--2.0
--1.5
--1.0
Collector Current, I
--0.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
Ta=75°C
°C
--25
Base-to-Emitter Voltage, VBE–V
IT00154
2.0
1.5
1.0
Collector Current, I
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
--25°C
IT00155
No.6307–2/5