SANYO 2SC5551 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Transistor

High-Frequency Medium-Output

Amplifier Applications

Ordering number:ENN6328

2SC5551

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· High fT : (fT=3.5GHz typ).

· Large current : (IC=300mA).

· Large allowable collector dissipation (1.3W max).

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2038A

[2SC5551]

4.5

1.6

0.4

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)eslup(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

C

mm052(draobcimarecanodetnuoM

0.5

2

3

1.5

0.75

2

× )mm8.03.1W

1

3.0

1.5

2.5

4.25max

1.0

0.4

1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)

04V
03V
2V
003Am
006Am

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

hEF1VECI,V5=
hEF2VECI,V5=

V

OBC

V

OBE

I,V02=

BC
BE

0=0.1Aµ

E

I,V1=

0=0.5Aµ

C

Am05=

C

Am003=

C

* : The 2SC5551 is classified by 50mA hFE as follows :

gnikraMBE

knaREF

h

EF

081ot09072ot531

21000TS (KOTO) TA-2665 No.6328–1/5

sgnitaR

nimpytxam

09072
02

Continued on next page.

tinU

Continued from preceding page.

retemaraPlobmySsnoitidnoC

tcudorPhtdiwdnaB-niaG

ecnaticapaCtuptuOboCV

ecnaticapaCrefsnarTesreveRerCV

2SC5551

f

V

T

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSesaB-ot-rotcelloCV

)tas(ICI,Am05=

EC

)tas(ICI,Am05=

EB

I,V5=

EC
BC
BC

Am05=

C

zHM1=f,V01=
zHM1=f,V01=

Am5=51.03.0V

B

Am5=9.02.1V

B

sgnitaR

nimpytxam

5.3zHG

9.20.4Fp

5.1Fp

tinU

100

80

–mA

C

60

40

Collector Current, I

20

0

0

Collector-to-Emitter Voltage, VCE–V

1.0

IC / IB=10

7
5

3

(sat) – V

2

CE

0.1
7

5

3

Collector-to-Emitter

Saturation Voltage, V

2

0.01

1.0

10

7

5

3

2

I

-- V

C

4

CE

128

VCE(sat) -- I

3

2

7

5

10

Collector Current, IC–A

5

Cob, Cre -- V

7

C

100

CB

500µA

450µA

400

350

300

2

A

µ

A

µ

µ

250

200

150

100µA

16

3

f=1MHz

A

µ

µ

A

A

A

µ

50µA

IB=0

IT01066

5

IT01068

7

20

1000

2

1000

FE

DC Current Gain, h

–dB

Forward Transfer Gain, S21e

– GHz

T

100

hFE -- I

7
5

3
2

7
5

3
2

10

1.0

20
18

16

14

12

10

8

6

4

2

0

1.0

10

7

5
3

2

3

2

7

5

10

Collector Current, IC–mA

S21e

f=200MHz

f=500MHz

3

2

7

5

10

Collector Current, IC–mA

fT -- I

C

VCE=5V

3

2

5

-- I

7

100

C

2

3

2

7

5

IT01067

1000

VCE=5V

3

2

7

5

100

3

2

7

5

IT01069

1000

C

VCE=5V

3

2

1.0

Output Capacitance,

Reverse Transfer Capacitance, Cob, Cre – pF

1.0

2

Collector-to-Base Voltage, VCB-- V

Cob

Cre

3

3

7

5

2

10

5

7

IT01070

100

1.0
7

5
3

2

Gain-Bandwidth Product, f

0.1

1.0

3

2

7

5

10

Collector Current, IC–mA

3

2

7

5

100

3

2

7

5

IT01071

1000

No.6328–2/5