SANYO 2SC5541 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band
Low-Noise Amplifier Applications
Ordering number:ENN6337
2SC5541
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low noise : NF=1.2dB typ (f=2GHz).
· High gain : S21e2=10dB typ (f=2GHz).
· High cutoff frequency : fT=13GHz typ.
· Ultrasmall, slim flat-lead package.
(1.4mm × 0.8mm × 0.6mm)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2159
[2SC5541]
1.4
0.25
132
0.45
0.2
OBC
OEC
OBE
0.3
0.8
1.4
0.3
0.6
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
9V
6V
5.1V
03Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioNFN
h
V
OBC
V
OBE
V
EF
f
V
T
2
V
|e12S|
1
2
V
2
|e12S|
V
I,V5=
BC
BE
EC
EC
BC
EC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am01=
C
I,V5=
Am01=
C
zHM1=f,V5=
I,V5=
C
I,V1=
C
I,V5=
C
zHG2=f,Am01=
zHG2=f,Am3=
zHG2=f,Am5=
Marking : RY
10700TS (KOTO) TA-1683 No.6337–1/5
sgnitaR
nimpytxam
09002
0131zHG
3.06.0Fp
801Bd
8Bd
2.10.2Bd
tinU
h
-- I
1000
7
5
3
FE
2
100
7
5
DC Current Gain, h
3
2
10
357 2357 2357
1.0
7
1.0
Collector Current, IC–mA
FE
Cob -- V
C
10 100
CB
2SC5541
f
-- I
T
VCE=5V
3
2
– GHz
T
10
7
5
3
2
Gain-Bandwidth Product, f
1.0
1.0
IT01427 IT01428
1.0
23 57 23 57
Collector Current, IC–mA
Cre -- V
f=1MHz
7
C
5V
2V
V
CE
=1V
10 100
CB
f=1MHz
5
3
2
5
3
2
Output Capacitance, Cob – pF
Reverse Transfer Capacitance, Cre – pF
0.1
2 3 57 2 3 57 2 3 57
Collector-to-Base Voltage, VCB-- V
16
14
–dB
2
12
10
8
6
4
2
Forward Transfer Gain, S21e
0
23 57 23 57 23 57
0.1
6
1.00.1
S21e2 -- I
=5V
CE
V
1.0
Collector Current, IC–mA
NF -- I
10 100
C
2V
1V
10 100
C
IT01429
f=1GHz
IT01431
f=2GHz
0.1
23 57 23 57 23 57
16
14
–dB
2
12
10
8
6
4
2
Forward Transfer Gain, S21e
0
23 57 23 57 23 57
120
1.00.1
Collector-to-Base Voltage, VCB-- V
S21e
V
10 100
2
-- I
C
=5V
CE
2V
1V
1.00.1
Collector Current, IC–mA
P
C
10 100
-- Ta
IT01430
f=2GHz
IT01432
5
4
3
100
–mW
C
80
60
=1V
CE
5V
2
V
40
Noise Figure, NF – dB
1
0
2 3 57 2 3 57 2 3 57
1.00.1
Collector Current, IC–mA
10 100
IT01433
Collector Dissipation, P
20
0
0 16014012010080604020
Ambient Temperature, Ta – ˚C
IT01434
No.6337–2/5
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