SANYO 2SC5540 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band Low-Noise Amplifier
and OSC Applications
Ordering number:ENN6280
2SC5540
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· High cutoff frequency : fT=10GHz typ.
· High gain : S21e2=13dB typ (f=1GHz).
· Low noise : NF=1.3dB typ (f=1GHz).
· Small Cob : Cob=0.4pF typ.
· Ultrasmall, slim flat-lead package.
(1.4mm × 0.8mm × 0.6mm)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2159
[2SC5540]
1.4
0.25
132
0.45
0.2
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
0.3
0.8
1.4
0.3
0.6
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
61V
8V
5.1V
02Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
niaGrefsnarTdrawroF|e12S|
erugiFesioNFN
h
V
OBC
V
OBE
V
EF
f
V
T
2
V
V
I,V01=
BC
BE
EC
EC
BC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am4=
C
I,V5=
Am4=
C
zHM1=f,V01=
I,V5=
C
I,V5=
C
zHG1=f,Am7=
zHG1=f,Am4=
Marking : HN
10700TS (KOTO) TA-1682 No.6280–1/3
sgnitaR
nimpytxam
09002
01zHG
4.07.0Fp
0131Bd
3.18.2Bd
tinU
2SC5540
f
h
-- I
FE
FE
3
2
100
7
5
3
2
DC Current Gain, h
10
7
5
23 57 23 2357
5
3
2
1.00.1
Collector Current, IC–mA
Cob -- V
C
CB
10
10
– GHz
T
1.0
Gain-Bandwidth Product, f
2
7
5
3
2
7
5
3
3
5
3
2
1.0
Collector Current, IC–mA
VCE=5V
5
IT01321 IT01322
f=1MHz
-- I
T
23 5757
Cre -- V
C
CB
10
VCE=5V
32
f=1MHz
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
7
23 57 23 57
0.1
Collector-to-Base Voltage, VCB-- V
16
14
–dB
2
12
10
8
6
4
2
Forward Transfer Gain, S21e
0
120
57
1.0
2
S21e
1.0
Collector Current, IC–mA
-- I
C
23 2323 57 5
P
-- Ta
C
10
253
10
IT01323 IT01324
VCE=5V
f=1GHz
IT01325
1.0
0.1
Reverse Transfer Capacitance, Cre – pF
Noise Figure, NF – dB
7
5
3
2
7
5
7
10
8
6
4
2
0
57
23 57 23 57
0.1
Collector-to-Base Voltage, VCB-- V
1.0
NF -- I
1.0
23 57
Collector Current, IC–mA
253
10
C
VCE=5V
f=1GHz
10
32
IT01326
–mW
C
Collector Dissipation, P
100
80
60
40
20
0
0 16014012010080604020
Ambient Temperature, Ta – ˚C
IT01327
No.6280–2/3
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