SANYO 2SC5539 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF
Low-Noise Wide-Band Amplifier Applications
Ordering number:ENN6341
2SC5539
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low noise : NF=1.1dB typ (f=1GHz).
· High gain : S21e2=12dB typ (f=1GHz).
· High cutoff frequency : fT=7.5GHz typ.
· Ultrasmall, slim flat-lead package.
(1.4mm × 0.8mm × 0.6mm)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2159
[2SC5539]
1.4
0.25
132
0.45
0.2
OBC
OEC
OBE
0.3
0.8
1.4
0.3
0.6
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
02V
21V
2V
001Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF|e12S|
erugiFesioNFN
h
V
OBC
V
OBE
V
EF
f
V
T
2
V
V
I,V01=
BC
BE
EC
EC
BC
BC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am03=
C
I,V5=
Am03=
C
zHM1=f,V5=
zHM1=f,V5=
I,V5=
C
I,V5=
C
zHG1=f,Am03=
zHG1=f,Am7=
Marking : ND
10700TS (KOTO) TA-2427 No.6341–1/5
sgnitaR
nimpytxam
09002
65.7zHG
58.03.1Fp
6.0Fp
0121Bd
1.10.2Bd
tinU
–mA
C
2SC5539
I
50
C -- VCE
100
0.35mA
0.30mA
–mA
C
80
60
40
0.25mA
30
0.20mA
I
C -- VBE
=5V
CE
V
2V
0.15mA
20
40
0.10mA
Collector Current, I
10
0
0
7
5
3
2
FE
100
7
5
DC Current Gain, h
3
2
10
3
10
7
5
3
2
2
Collector-to-Emitter Voltage, VCE–V
h
FE -- IC
64
VCE=5V
3
2
7
5
1.0
Collector Current, IC–mA
7
5
10
Cob -- V
2
CB
3
2V
5
8
7
100
f=1MHz
0.05mA
IB=0
IT01418
2
IT01420
10
3
Collector Current, I
20
0
0.2
0
0.4
Base-to-Emitter Voltage, VBE–V
10
7
– GHzReverse Transfer Capacitance, Cre – pFForward Transfer Gain, S21e
5
T
3
2
0.6
fT -- I
=5V
CE
V
C
2V
0.8
1.0
1.2
IT01419
Gain-Bandwidth Product, f
1.0
10
7
5
3
2
1.0
2
57
3
Collector Current, IC–mA
10
Cre -- V
2357
CB
100
IT01421
f=1MHz
1.0
7
5
3
Output Capacitance, Cob – pFNoise Figure, NF – dB
2
0.1
2
5
0.1
10
3
Collector-to-Base Voltage, VCB- - V Collector-to-Base Voltage, VCB-- V
7
1.0
2
3
NF -- I
5
2
5
7
10
3
7
100
IT01422
C
f=1GHz
8
6
4
=2V
2
0
1.0
3
2
Collector Current, IC–mA
77
5
10
CE
V
35
2
5V
7
IT01424
100
1.0
7
5
3
2
0.1
2
0.1
16
7
5
3
1.0
S21e
5
3
2
-- I
7
10
C
2
3
2
7
5
IT01423
100
f=1GHz
14
–dB
2
12
10
8
6
4
2
0
1.0
23 5
Collector Current, IC–mA
=5V
CE
V
2V
7
10
23 5
7
IT01425
100
No.6341–2/5
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