SANYO 2SC5538 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF OSC,
High-Frequency Amplifier Applications
Ordering number:ENN6291
2SC5538
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· High gain : S21e2=10.5dB typ (f=1GHz).
· High cutoff frequency : fT=5.2GHz typ.
· Ultrasmall, slim flat-lead package.
(1.4mm×0.8mm×0.6mm)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2159
[2SC5538]
1.4
0.25
132
0.45
0.2
OBC
OEC
OBE
0.3
0.8
1.4
0.3
0.6
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
02V
01V
2V
001Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF|e12S|
erugiFesioNFN
hEF1VECI,V3=
hEF2VECI,V3=
V
OBC
V
OBE
f
V
T
2
V
V
I,V01=
BC
BE
EC
BC
BC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
Am7=
C
Am03=
C
I,V3=
Am7=
C
zHM1=f,V3=
zHM1=f,V3=
I,V3=
C
I,V3=
C
zHG1=f,Am7=
zHG1=f,Am7=
Marking : NA
D1099TS (KOTO) TA-1680 No.6291–1/4
sgnitaR
nimpytxam
011002
001
32.5zHG
0.15.1Fp
7.0Fp
85.01Bd
4.15.2Bd
tinU
–mA
Collector Current, I
DC Current Gain, h
FE
C
100
2SC5538
I
I
-- V
35
30
25
20
15
10
5
0
C
Collector-to-Emitter Voltage, VCE–V
7
5
3
2
7
5
3
1.0 10 100
3
2
h
23 57 23 577235
Collector Current, IC–mA
Cob -- V
FE
-- I
CE
CB
32
200µA
180
160µA
140
120
100µA
80µA
µA
µA
µA
–mA
C
28
24
20
16
12
60µA
40µA
20µA
IB=0
102468913570
IT01312
C
VCE=3V
IT01314
f=1MHz
8
Collector Current, I
4
0
0 0.2 0.4 0.6 1.20.8 1.0
Base-to-Emitter Voltage, VBE–V
2
10
– GHz
7
T
5
3
2
1.0
Gain-Bandwidth Product, f
7
5
3
2
1.0
23 57 23 577
Collector Current, IC–mA
-- V
C
f
-- I
T
Cre -- V
BE
VCE=3V
IT01313
C
VCE=3V
f=1GHz
10
IT01315
CB
f=1MHz
1.0
7
5
3
2
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
10
23 577
0.1
Collector-to-Base Voltage, VCB-- V
1.0
NF -- I
23 2357
C
10
IT01316
VCE=3V
f=1GHz
8
6
4
Noise Figure, NF – dB
2
0
1.0
Collector Current, IC–mA
23 5723 5735
10 100
7
IT01318
0.1
Reverse Transfer Capacitance, Cre – pF
7
0.1 1.0
Collector-to-Base Voltage, VCB-- V
14
12
–dB
2
10
8
6
4
2
Forward Transfer Gain, S21e
0
1.0
2
S21e
Collector Current, IC–mA
-- I
C
2357723
10 100
10
IT01317
VCE=3V
f=1GHz
57
IT01319
2323 5723 577
No.6291–2/4
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