SANYO 2SC5537 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Transistor

Low-Voltage, Low-Current

High-frequency Amplifier Applications

Ordering number:ENN6340

2SC5537

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low voltage, low current operation : fT=5GHz typ.
(VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz).

: NF=2.6dB typ (f=1GHz).

· Ultrasmall, slim flat-lead package.
(1.4mm × 0.8mm × 0.6mm)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

C

Package Dimensions

unit:mm

2159

[2SC5537]

1.4

0.25

0.45

132

0.2

0.3

0.8

0.3

0.1

1.4

1 : Base
2 : Emitter

0.6

3 : Collector
SANYO : SSFP

21V
6V

5.1V
51Am
08Wm

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaG

ecnaticapaCtuptuOboCV

niaGrefsnarTdrawroF

erugiFesioN

h

V

OBC

V

OBE

V

EF

f

V

T

2

V

|e12S|

1

2

V

|e12S|

2

V

1FN

V

2FN

I,V5=

BC
BE
EC
EC
BC
EC
EC
EC
EC

0=0.1Aµ

E

I,V1=

0=01Aµ

C

I,V1=

Am1=

C

I,V1=

Am1=

C

zHM1=f,V1=

I,V1=

C

I,V2=

C

I,V1=

C

I,V2=

C

zHG1=f,Am1=
zHG1=f,Am3=
zHG1=f,Am1=
zHG1=f,Am3=

Marking : CN

10700TS (KOTO) TA-2425 No.6340–1/3

sgnitaR

nimpytxam

09002

5zHG

55.09.0Fp

5.47 Bd

5.01Bd

6.25.4Bd

9.1Bd

tinU

2SC5537

hFE -- I

FE

3

2

100

7
5

3
2

DC Current Gain, h

10

7
5

1.0

7

5

3

325757 325 3257

Collector Current, IC–mA

1.00.1

Cob -- V

C

CB

V

10

CE

1V

=2V

IT01386

f=1MHz

2

10

– GHzForward Transfer Gain, S21e

7

T

5

3

2

1.0
7

5

Gain-Bandwidth Product, f

3

14

12

–dB

2

10

8

6

f

-- I

T

C

1V

1.0

Collector Current, IC–mA

S21e2 -- I

C

=2V

CE

V

1V

V

CE

=2V

10

f=1GHz

22 3 57 2 3 57

IT01387

2

Output Capacitance, Cob – pFNoise Figure, NF – dB

0.1

10

8

6

4

2

325

73257 3257

1.0

Collector-to-Base Voltage, VCB-- V

NF -- I

10 1000.1

C

V

=1V

CE

IT01388

f=1GHz

2V

4

2

0

23 253577

14

12

10

8

, NF -- dB

2

6

S21e

4

2

Collector Current, IC–mA

S21e2, NF -- V

1.0

CE

IC=3mA

2

S21e

1mA

NF

IC=1mA

IT01389

f=1GHz

3mA

0

012345 67

Collector-to-Emitter Voltage, VCE–V

IT01391

100

0

1.0

Collector Current, IC–mA

P

C

-- Ta

32

573257 2

10

IT01390

–mW

C

Collector Dissipation, P

80

60

40

20

0

2006040 80 100 140120 160

Ambient Temperature, Ta – ˚C

IT01392

No.6340–2/3