SANYO 2SC5536 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF Low-Noise Amplifier , OSC Applications
Ordering number:ENN6290
2SC5536
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low noise : NF=1.8dB typ (f=150MHz).
· High gain : S21e2=16dB typ (f=150MHz).
· Ultrasmall, slim flat-lead package.
(1.4mm×0.8mm×0.6mm)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2159
[2SC5536]
1.4
0.25
132
0.45
0.2
OBC
OEC
OBE
0.3
0.8
1.4
0.3
0.6
0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
02V
21V
2V
05Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF|e12S|
erugiFesioNFN
hEF1VECI,V2=
hEF2VECI,V2=
V
OBC
V
OBE
f
V
T
2
V
V
I,V01=
BC
BE
EC
BC
BC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
Am3=
C
Am05=
C
I,V2=
Am3=
C
zHM1=f,V01=
zHM1=f,V01=
I,V2=
C
I,V2=
C
zHM051=f,Am3=
zHM051=f,Am3=
Marking : MA
D1099TS (KOTO) TA-1678 No.6290–1/4
sgnitaR
nimpytxam
08002
07
0.17.1zHG
1.18.1Fp
8.0Fp
3161Bd
8.10.3Bd
tinU
2SC5536
f
h
-- I
3
FE
C
2
T
-- I
C
2
FE
100
7
5
3
DC Current Gain, h
2
10
5
3
2
1.0
7
5
3
2
Output Capacitance, Cob – pF
23 577
1.0
Collector Current, IC–mA
Cob -- V
CB
VCE=2V
10
1V
23 5735
IT01305 IT01306
f=1MHz
10
– GHz
7
T
5
3
2
1.0
7
5
Gain-Bandwidth Product, f
3
7
1.0 10
5
3
2
1.0
7
5
3
2
Collector Current, IC–mA
V
Cre -- V
CE
=2V
1V
23 5723 57
CB
f=1MHz
Reverse Transfer Capacitance, Cre – pF
0.1
7
32
28
–dB
2
24
20
16
12
8
4
Forward Transfer Gain, S21e
0
120
23 57
0.1
Collector-to-Base Voltage, VCB-- V
S21e
E
C
V
57
233572357
1.0
Collector Current, IC–mA
=2V
P
1.0
C
23 2357
2
1V
-- Ta
10
IT01307 IT01308
-- I
C
f=150MHz
10 100
IT01309
0.1
7
0.1 1.0
Collector-to-Base Voltage, VCB-- V
12
10
8
6
4
Noise Figure, NF – dB
2
0
7
23 57 23 57
1.0
23 235723 57
V
CE
NF -- I
=2V
C
1V
Collector Current, IC–mA
10 100
10
f=150MHz
IT01310
100
– mW
80
C
60
40
20
Collector Dissipation, P
0
0 16014012010080604020
Ambient Temperature, Ta – °C
IT01311
No.6290–2/4
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