SANYO 2SC5534 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band Low-Noise Amplifier,
OSC Applications
Ordering number:ENN6258
2SC5534
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.65
0.65
0.5
0.65
0.6
0.3
0.15
0 to 0.1
0.2
2.1
0.9
0.7
1.25
0.425
0.425
2.0
1
2
3
4
Features
· Low noise : NF=1.2dB typ (f=2GHz).
· High gain : S21e2=10dB typ (f=2GHz).
· High cutoff frequency : fT=13GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2161
[2SC5534]
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
SANYO : MCP4
OBC
OEC
OBE
9V
6V
5.1V
03Am
051Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioNFNVECI,V5=
h
V
OBC
OBE
EF
f
T
BC
V
BE
V
EC
V
EC
BC
2
V
|e12S|
1
EC
2
V
2
|e12S|
EC
I,V5=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am01=
C
I,V5=
Am01=
C
zHM1=f,V5=
I,V5=
C
I,V1=
C
C
zHG2=f,Am01=
zHG2=f,Am3=
zHG2=f,Am5=2.10.2Bd
nimpytxam
Marking : RY
D1099TS (KOTO) TA-2426 No.6258–1/5
sgnitaR
09002
0131zHG
3.06.0Fp
801Bd
8Bd
tinU
1000
FE
100
DC Current Gain, h
2SC5534
h
-- I
FE
7
5
3
2
7
5
3
2
C
VCE=5V
100
– GHz
T
Gain-Bandwidth Product, f
7
5
3
2
10
7
5
3
2
f
-- I
T
C
VCE=5V
1V
10
2 3 57 2 3 57 2 3 57
10
7
5
3
2
1.0
7
5
3
Output Capacitance, Cob – pF
2
1.00.1
Collector Current, IC–mA
Cob -- V
10 100
CB
IT00579 IT00580
f=1MHz
1.0
23 57 23 57 23 57
10
7
5
3
2
1.0
7
5
3
2
1.00.1
Collector Current, IC–mA
Cre -- V
CB
10 100
f=1MHz
Reverse Transfer Capacitance, Cre – pF
0.1
2 3 57 2 3 57 2 3 57
Collector-to-Base Voltage, VCB-- V
16
f=1GHz
14
–dB
2
12
10
8
6
1.00.1
S21e
=5V
CE
V
10 100
2
-- I
C
1V
IT00581
0.1
23 57 23 57 23 57
Collector-to-Base Voltage, VCB-- V
16
14
–dB
2
12
10
8
6
1.00.1
S21e
CE
V
10 100
2
-- I
C
=5V
1V
IT00582
f=2GHz
4
2
Forward Transfer Gain, S21e
0
2357 23 57 23 57
0.1
6
5
4
3
1.0
10 100
Collector Current, IC–mA
NF -- I
NF -- I
C
C
IT00583
f=2GHz
=1V
CE
2
V
5V
Noise Figure, NF – dB
1
0
2 3 57 2 3 57 2 3 57
1.00.1
Collector Current, IC–mA
10 100
IT00585
4
2
Forward Transfer Gain, S21e
0
2 3 57 23 57 23 57
Collector Current, IC–mA
160
140
120
– mW
C
100
80
60
40
Collector Dissipation, P
20
0
0 16014012010080604020
Ambient Temperature, Ta – °C
1.00.1
P
C
10 100
-- Ta
IT00584
IT00586
No.6258–2/5
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