Sanyo 2SC5506 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Ordering number:EN6070

2SC5506

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

20.0

26.0

Features

· High speed.

· High breakdown voltage (V

CBO

=1600V).

· High reliability (Adoption of HVP process).

· Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

C

Package Dimensions

unit:mm

2048B

[2SC5506]

2.0

3.4

20.7

12

OBC
OEC
OBE

PC

Tc=25˚C

3.3

1.0

2.0

1.2

3

2.8

5.455.45

5.0

0.6

1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL

0061V
008V
6V
02A
04A

5.3W
081W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloC

egatloVniatsuSrettimE-ot-rotcelloCV

tnerruCffotuCrettimEI

tnerruCffotuCrotcelloC

niaGtnerruCCD

I

I
hEF1VECI,V5=
hEF2VECI,V5=

V

SEC

OBE
OBC

EC

I

)sus(OEC

C

V

BE

V

BC

R,V0061=

0=0.1Am

EB

I,Am001=

0=008V

B

I,V4=

0=0.1Am

C

I,V008=

0=01Aµ

E

A1=

C

A41=

C

51099TS (KOTO) TA-1520 No.6070–1/4

sgnitaR

nimpytxam

5103
47

tinU

Continued on next page.

2SC5506

Continued from preceding page.

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egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

emiTegarotSt

emiTllaFt

Switching Time Test Circuit

I

I,A41=

)tas(EC

C

I

)tas(EB

C

I

gts

C

I

f

C

A5.3=

B

I,A41=

A5.3=5.1V

B

I,A21=
I,A21=

I,A0.2=

1B
1B

2B

I,A0.2=

2B

sgnitaR

nimpytxam

A0.5–=
A0.5–=

tinU

5V

0.3sµ

2.0sµ

PW=20µs
DC≤1%

INPUT

50Ω

20

18

16

–A

14

C

12

10

8

6

Collector Current, I

4

2
0

02468101 3 5 7 9 0 0.2 0.4 0.6 0.8 1.0 1.2

Collector-to-Emitter Voltage, VCE–V

100

VCE=5V

7
5

3

FE

2

10

7
5

DC Current Gain, h

3
2

1.0

0.1

Ta=120°C

357

2357232

IB1
IB2

R

B

V

R

+

100µF

VBE=–2V

5.0A

IC-

4.5A

h

FE

4.0A

-

V

CE

3.5A

I

C

25°C

°C

–40

1.0

Collector Current, IC–A

+

470µF

VCC=200V

3.0A

OUTPUT

RL=16.7Ω

2.5A

I

10

2.0A

1.5A

1.0A

0.5A

=

B

20

VCE=5V

18

16

–A

14

C

12

10

8

6

Collector Current, I

4

0

2
0

IC-

V

BE

°C

Ta=120

°C

25

–40°C

Base-to-Emitter Voltage, VBE–V

V

10

I

/

IB=5

C

7
5

3

–V

2

1.0
7

CE(sat)

5
3

2

0.1

Ta=–40

7
5

3

Collector-to-Emitter

Saturation Voltage, V

2

0.01

0.1 1.0 10

°C

°C

25

CE(sat)

°C

120

357

-

I

C

23 23572

Collector Current, IC–A

No.6070–2/4