SANYO 2SC5504 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band Low-Noise
Amplifier Applications
Ordering number:ENN6223
2SC5504
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.65
0.65
0.5
0.65
0.6
0.3
0.15
0 to 0.1
0.2
2.1
0.9
0.7
1.25
0.425
0.425
2.0
1
2
3
4
Features
· Low noise : NF=0.9dB typ (f=1GHz).
· High gain : S21e2=11dB typ (f=1GHz).
· High cutoff frequency : fT=11GHz typ.
· Low voltage, low current operation.
(VCE=1V, IC=1mA)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* : The 2SC5504 is classified by 10mA hFE as follows : Continued on next page.
Package Dimensions
unit:mm
: NF=1.4dB typ (f=1.5GHz).
: fT=7GHz typ.
: S21e2=6dB typ (f=1.5GHz).
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
OBC
OEC
OBE
C
C
V
OBC
V
OBE
h
V
EF
fT1VECI,V5=
fT2VECI,V1=
h
EF
BC
BE
EC
BC
BC
gnikraMNM
knaR45
2161
I,V01=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am01=
C
Am01=
C
Am1=
C
zHM1=f,V01=
zHM1=f,V01=
081ot09072ot531
[2SC5504]
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
SANYO : MCP4
2
mm052(draobcimarecanodetnuoM
× )mm8.0003Wm
sgnitaR
nimpytxam
*09*072
811zHG
7zHG
54.07.0Fp
52.0Fp
02V
01V
5.1V
03Am
˚C
˚C
tinU
O1899TS (KOTO) TA-1703 No.6223–1/6
Continued from preceding page.
retemaraPlobmySsnoitidnoC
niaGrefsnarTdrawroF
erugiFesioN
5
3
2
FE
100
7
5
3
2
DC Current Gain, h
h
FE
-- I
2SC5504
sgnitaR
2
V
|e12S|
1
2
V
|e12S|
2
1FNVECI,V5=
2FNVECI,V2=
C
VCE=5V
I,V5=
EC
C
I,V1=
EC
C
C
C
zHG5.1=f,Am01=
zHG5.1=f,Am1=
zHG5.1=f,Am5=4.10.3Bd
zHG1=f,Am3=9.0Bd
3
2
– GHz
10
T
7
5
3
2
nimpytxam
911Bd
6Bd
f
-- I
T
C
=5V
V
CE
1V
tinU
f=1GHz
10
7
5
23 57 23 57 23 57
5
3
2
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
16
14
–dB
2
12
10
23 5772357235
1.00.1
Collector Current, IC–mA
Cob -- V
S21e
CE
V
1.00.1
=5V
Collector-to-Base Voltage, VCB-- V
10 100
CB
2
-- I
C
2V
10
IT00587 IT00588
f=1MHz
IT00589 IT00590
f=1.5GHz
1V
8
1.0
Gain-Bandwidth Product, f
7
5
23 57 23 57 23 5
5
3
2
1.0
7
5
3
2
0.1
Reverse Transfer Capacitance, Cre – pF
7
5
16
14
–dB
2
12
10
8
237572357235
Collector-to-Base Voltage, VCB-- V
1.00.1
Collector Current, IC–mA
Cre -- V
1.00.1
2
S21e
V
CE
CB
-- I
=1V
10
C
2V
f=1MHz
10
f=1GHz
5V
6
4
2
Forward Transfer Gain, S21e
0
2357357 2357
1.0
Collector Current, IC–mA
10 100
IT00591 IT00592
6
4
2
Forward Transfer Gain, S21e
0
2357357 2357
1.0
Collector Current, IC–mA
10 100
No.6223–2/6
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