SANYO 2SC5503 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Ordering number:ENN6222
2SC5503
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.65
0.65
0.5
0.65
0.6
0.3
0.15
0 to 0.1
0.2
2.1
0.9
0.7
1.25
0.425
0.425
2.0
1
2
3
4
Features
· Low noise : NF=1.2dB typ (f=1GHz).
· High gain : S21e2=15dB typ (f=1GHz).
· High cutoff frequency : fT=9.0GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* : The 2SC5503 is classified by 15mA hFE as follows : Continued on next page.
Package Dimensions
unit:mm
2161
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
gnikraMNG
knaR45
h
EF
081ot09072ot531
OBC
OEC
OBE
C
C
V
OBC
V
OBE
h
V
EF
f
V
T
I,V01=
BC
BE
EC
EC
BC
BC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am51=
C
I,V5=
Am51=
C
zHM1=f,V01=
zHM1=f,V01=
[2SC5503]
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
SANYO : MCP4
2
mm052(draobcimarecanodetnuoM
× )mm8.0004Wm
sgnitaR
nimpytxam
*09*072
0.9zHG
6.01.1Fp
3.0Fp
61V
8V
5.1V
05Am
˚C
˚C
tinU
O1899TS (KOTO) TA-1712 No.6222–1/6
Continued from preceding page.
retemaraPlobmySsnoitidnoC
niaGrefsnarTdrawroF|e12S|
erugiFesioN
5
3
2
FE
100
7
5
3
2
DC Current Gain, h
10
7
5
3
357 2357 2 2357
5
3
2
1.0
Collector Current, IC–mA
h
-- I
FE
10 100
Cob -- V
C
CB
2
V
EC
FNVECI,V5=
VCE=5V
IT00644
f=1MHz
2SC5503
I,V5=
C
C
sgnitaR
nimpytxam
zHG1=f,Am51=
2151Bd
zHG1=f,Am5=2.15.2Bd
f
-- I
T
C
101.0
CB
– GHz
T
1.0
Gain-Bandwidth Product, f
2
10
7
5
3
2
7
5
3
23 5772357
Collector Current, IC–mA
5
3
2
Cre -- V
tinU
VCE=5V
100
IT00645
f=1MHz
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
16
14
–dB
2
12
10
8
6
4
2
Forward Transfer Gain, S21e
0
237 57 2357 235
Collector-to-Base Voltage, VCB-- V
1.00.1
S21e
10
2
-- I
C
IT00646
VCE=5V
f=1GHz
23 57357 2357
1.0
Collector Current, IC– mA Collector Current, IC–mA
10 100
IT00648
1.0
7
5
3
2
0.1
7
Reverse Transfer Capacitance, Cre – pF
5
2 3 57 2 3 57 2 3 5107
10
1.00.1
Collector-to-Base Voltage, VCB-- V
NF -- I
C
100
IT00647
VCE=5V
f=1GHz
8
6
4
Noise Figure, NF – dB
2
0
23 5723577
101.0
IT00649
No.6222–2/6
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