SANYO 2SC5502 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications
Ordering number:ENN6279
2SC5502
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.65
0.65
0.5
0.65
0.6
0.3
0.15
0 to 0.1
0.2
2.1
0.9
0.7
1.25
0.425
0.425
2.0
1
2
3
4
Features
· Low noise : NF=1.1dB typ (f=1GHz).
· High gain : S21e2=12dB typ (f=1GHz).
· High cutoff frequency : fT=8GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* : The 2SC5502 is classified by 30mA hFE as follows : Continued on next page.
Package Dimensions
unit:mm
2161
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCrefsnarTesreveRerCV
gnikraMYT
knaR45
h
EF
081ot09072ot531
OBC
OEC
OBE
C
C
V
OBC
OBE
hEF1VECI,V5=
hEF2VECI,V5=
f
T
BC
V
BE
V
EC
BC
I,V5=
0=0.1Aµ
E
I,V1=
0=01Aµ
C
Am03=
C
Am07=
C
I,V5=
Am03=
C
zHM1=f,V5=
[2SC5502]
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
SANYO : MCP4
2
mm052(draobcimarecanodetnuoM
× )mm8.0005Wm
sgnitaR
nimpytxam
*09*072
08
68 zHG
6.00.1Fp
02V
21V
2V
001Am
˚C
˚C
tinU
10700TS (KOTO) TA-1711 No.6279–1/6
Continued from preceding page.
retemaraPlobmySsnoitidnoC
niaGrefsnarTdrawroF|e12S|
erugiFesioN
50
0.35mA
40
–mA
C
30
I
C
-- V
CE
FNVECI,V5=
0.30mA
0.25mA
0.20mA
2
V
2SC5502
I,V5=
EC
C
C
sgnitaR
nimpytxam
zHG1=f,Am03=
zHG1=f,Am7=1.10.2Bd
I
100
80
C
0121Bd
-- V
BE
–mA
C
60
tinU
20
0.15mA
40
0.10mA
Collector Current, I
Collector Current, I
10
0
Collector-to-Emitter Voltage, VCE–V
h
-- I
7
5
3
2
FE
100
7
5
DC Current Gain, h
3
2
10
10
7
5
3
2
1.0 10 100
FE
Collector Current, IC–mA
Cob -- V
C
VCE=5V
2323 577357 235
CB
0.05mA
IB=0
1024680
IT00651
2V
IT00653
f=1MHz
20
0
0 0.2 0.4 0.6 1.20.8 1.0
V
=5V
CE
Base-to-Emitter Voltage, VBE–V
f
-- I
T
10
7
C
=5V
CE
V
2V
– GHz
5
T
3
2
Gain-Bandwidth Product, f
1.0
10
7
5
3
2
1.0
23 57
Collector Current, IC–mA
10
Cre -- V
23 57
CB
2V
IT00652
100
IT00654
f=1MHz
1.0
7
5
3
Output Capacitance, Cob – pF
2
1.0
7
5
3
2
Reverse Transfer Capacitance, Cre – pF
0.1
0.1
23 57
Collector-to-Base Voltage, VCB-- V
23 23 57
1.0
57
10
100
IT00655
0.1
0.1
23 57
1.0
Collector-to-Base Voltage, VCB-- V
23 5723 57
10010
IT00656
No.6279–2/6
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