SANYO 2SC5501 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Ordering number:ENN6221
2SC5501
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.65
0.65
0.5
0.65
0.6
0.3
0.15
0 to 0.1
0.2
2.1
0.9
0.7
1.25
0.425
0.425
2.0
1
2
3
4
Features
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=13dB typ (f=1GHz).
· High cutoff frequency : fT=7GHz typ.
· Large allowable collector dissipation :
PC=500mW max.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* : The 2SC5501 is classified by 20mA hFE as follows : Continued on next page.
Package Dimensions
unit:mm
2161
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaG
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
gnikraMNL
knaR45
h
EF
081ot09072ot531
OBC
OEC
OBE
C
C
V
OBC
V
OBE
h
V
EF
f
V
T
I,V01=
BC
BE
EC
EC
BC
BC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am02=
C
I,V5=
Am02=
C
zHM1=f,V01=
zHM1=f,V01=
[2SC5501]
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
SANYO : MCP4
2
mm052(draobcimarecanodetnuoM
× )mm8.0005Wm
sgnitaR
nimpytxam
*09*072
57 zHG
57.02.1Fp
4.0Fp
02V
01V
2V
07Am
˚C
˚C
tinU
O1899TS (KOTO) TA-1710 No.6221–1/6
Continued from preceding page.
retemaraPlobmySsnoitidnoC
niaGrefsnarTdrawroF
erugiFesioN
3
2
100
FE
7
5
3
2
DC Current Gain, h
10
7
5
3
2
23 577
1.0
Collector Current, IC– mA Collector Current, IC–mA
h
-- I
FE
10
Cob -- V
C
23 57
CB
2SC5501
sgnitaR
2
V
|e12S|
1
2
V
|e12S|
2
FNVECI,V5=
I,V5=
EC
C
I,V2=
EC
C
C
zHG1=f,Am02=
zHG1=f,Am3=
zHG1=f,Am7=0.18.1Bd
2
VCE=5V
10
– GHz
7
T
5
3
2
1.0
Gain-Bandwidth Product, f
7
5
235
100
IT00637 IT00638
f=1MHz
7
3
2
1.0
23 57
nimpytxam
f
-- I
T
10
Cre -- V
0131Bd
9Bd
C
23 257
CB
tinU
VCE=5V
100
f=1MHz
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
7
14
12
–dB
2
10
8
6
4
2
23 57
0.1
Collector-to-Base Voltage, VCB-- V
S21e
1.0
23 2357
2
=5V
CE
V
2V
-- I
10
IT00639 IT00640
C
f=1GHz
1.0
7
5
3
2
0.1
7
Reverse Transfer Capacitance, Cre – pF
5
7
0.1
23 57
1.0
23 2357
10
Collector-to-Base Voltage, VCB-- V
12
NF -- I
C
VCE=5V
f=1GHz
10
8
6
4
Noise Figure, NF – dB
2
Forward Transfer Gain, S21e
0
57 57
23357223
1.0
Collector Current, IC– mA Collector Current,IC–mA
10 100
IT00641
0
357
23 57 7
1.0
10 100
2235
IT00642
No.6221–2/6
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